2018
DOI: 10.1007/s11814-018-0060-6
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Effect of sulfur annealing on the morphological, structural, optical and electrical properties of iron pyrite thin films formed from FeS2 nano-powder

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Cited by 16 publications
(8 citation statements)
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“…It was then proposed that the excess of sulfur was mainly formed by sulfur with a coordination number different to that presented in FeS 2 or even to unbounded sulfur or polysulfides. This behavior of sulfur has been reported to occur in pyrite thin films on both SLG and Na-free substrates (amorphous quartz and alumina) [25,48,49]. Thus, our present results seem to suggest that this excess of sulfur is due to some intrinsic process closely related to the formation reactions of the pyrite thin films.…”
Section: Stoichiometry and Impurities: Influence Of The Substratesupporting
confidence: 79%
“…It was then proposed that the excess of sulfur was mainly formed by sulfur with a coordination number different to that presented in FeS 2 or even to unbounded sulfur or polysulfides. This behavior of sulfur has been reported to occur in pyrite thin films on both SLG and Na-free substrates (amorphous quartz and alumina) [25,48,49]. Thus, our present results seem to suggest that this excess of sulfur is due to some intrinsic process closely related to the formation reactions of the pyrite thin films.…”
Section: Stoichiometry and Impurities: Influence Of The Substratesupporting
confidence: 79%
“…At this pressure, the conductivities of pyrite synthesized in 1, 2, and 4 h were 3.85, 12.5, and 14.3 S/cm. These results agree with other work showing that increasing grain sizeor decreasing grain boundaryand increasing crystallinity significantly reduced the resistivity of polycrystalline semiconductor films …”
Section: Resultssupporting
confidence: 93%
“…These results agree with other work showing that increasing grain size—or decreasing grain boundary—and increasing crystallinity significantly reduced the resistivity of polycrystalline semiconductor films. 38 …”
Section: Resultsmentioning
confidence: 99%
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“…In recent years, inorganic semiconductors have been employed to generate clean energy in various optoelectronic and electrochemical fields, mainly because of their high stability under atmospheric conditions [1][2][3][4][5]. Among these, groups IV-VI tin-based binary sulfides such as tin monosulfide (SnS) and tin disulfide (SnS 2 ) have drawn much attention because of their abundance, low cost, non-toxicity, high catalytic activity, material diversity, structural multiformity, and excellent electrical conductivity [6].…”
Section: Introductionmentioning
confidence: 99%