Effect of Surface Recombination on the Parameters of Photodiodes Based on HgCdTe Semiconductor Structures

Effect of HgCdTe native oxide on the electro-physical properties of metal–insulator–semiconductor structures with atomic layer deposited Al2O3

“…Despite the high fixed charge density (up to 1 × 10 12 cm −2 ) in the structures with plasma oxide, the positive sign of the charge is rather more preferable for an n-type semiconductor based devices (primarily, for MIS structures and p-on-n photodiodes), causing surface accumulation regime instead of strong inversion in the absence of bias [2,3]. The benefit is due to the fact that in case of strong inversion of a semiconductor surface there is a space charge region, extended beneath the entire surface, which comes together with a space charge region under a gate at depleting bias.…”

“…Whereas mercury cadmium telluride (HgCdTe, MCT) is widely used for IR detection (from short to long wavelengths), improving its surface passivation methods remains of current interest so far as density of fast surface states, density of slow interface traps, fixed charge density, surface recombination velocity, and surface leakage current can significantly affect device performance [1][2][3]. What is more, the longer wavelengths are detected the stronger this influence is.…”