Effect of the growth temperature on the properties of AlxGal−xN epilayers grown by HVPE

Lee, Ji Sun; Byun, Dongjin; Oh, Hae Kon; Choi, Young Jun; Lee, Hae Yong; Kim, Jin Ho; Lim, Tae Young; Hwang, Jonghee

doi:10.1016/j.jcrysgro.2012.02.023

Cited by 7 publications

(2 citation statements)

References 19 publications

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“…We used commercial c-plane Al 0.7 Ga 0.3 N templates that were provided by LumiGNtech Co., Ltd. (Gwangmyeong-si, Korea) as the substrates [27]. We anticipated that the h-BN could be integrated with current AlGaN-based DUV optoelectronic devices and thus the specific template composition was selected to be identical to that of the p-type Al 0.7 Ga 0.3 N cladding layer that is typically used in 260-280 nm DUV LEDs [28].…”

Section: Methodsmentioning

confidence: 99%

Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al0.7Ga0.3N Template by Low-Temperature Radio-Frequency Sputtering

2019

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Hexagonal boron nitride (h-BN) is an attractive wide-bandgap material for application to emitters and detectors operating in the deep ultraviolet (DUV) spectral region. The optical transmittance of h-BN in the DUV region is particularly important for these devices. We report on the deposition of thick h-BN films (>200 nm) on Al0.7Ga0.3N templates via radio-frequency sputtering, along with the realization of ultrahigh transmittance in the DUV region. The fraction of the gas mixture (Ar/N2) was varied to investigate its effects on the optical transmittance of BN. DUV light transmittance of as high as 94% was achieved at 265 nm. This value could be further enhanced to exceed 98% by a post-annealing treatment at 800 °C in a N2 ambient for 20 min. The phase of the highly DUV–transparent BN film was determined to be a purely hexagonal structure via Raman spectra measurements. More importantly, these deposition processes were performed at a low temperature (300 °C), which can provide protection from device performance degradation when applied to actual devices.

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Section: Methodsmentioning

confidence: 99%

Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al0.7Ga0.3N Template by Low-Temperature Radio-Frequency Sputtering

2019

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“…[18][19][20][21][22][23] Among these processes, MOCVD has been regarded as a chief apparatus for the commercial fabrication of LEDs. However, this process has complicated growth mechanisms which are necessary to be considered for obtaining films with optimal characteristics.…”

Section: Introductionmentioning

confidence: 99%

HVPE growth of Al_XGa_1-XN templates for UV-LED applications

et al. 2015

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In this work, the Al x Ga 1-x N-on-sapphire template was successfully prepared by halide vapor phase epitaxy (HVPE) at 1100 o C. The flow ratio (R) of the HCl flow rate through Al metal to the total HCl flow rates through Al and Ga metals was adjusted to control the Al content. The Al x Ga 1-x N films without phase separation can be obtained as the R value exceeds 0.67. The low R value strongly enhances the formation probability of GaN instead of Al x Ga 1-x N. This indicates that a sufficient concentration of the Al precursor is certainly vital for the formation of Al x Ga 1-x N compounds. The Al x Ga 1-x N prepared at the R value of 0.80 can achieve best crystallinity and the lowest surface roughness. Furthermore, the optical transmittance of the Al x Ga 1-x N under R=0.80 is above 70% between the wavelength of 225 nm and 400 nm. As a result, the Al x Ga 1-x N under R=0.80 can be regarded as a suitable growth template for the ultraviolet light-emitting diodes. The internal quantum efficiency of the 370 nm-quantum wells on the Al x Ga 1-x N/sapphire prepared under R=0.80 shows 127% improvement as compared with that on the undoped-GaN/sapphire.

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Surface properties of AlN and Al x Ga1−x N epitaxial layers characterized by angle resolved X-ray photoelectron spectroscopy

Yang

Zhang

Wang

et al. 2014

J Mater Sci: Mater Electron

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Effect of the growth temperature on the properties of AlxGal−xN epilayers grown by HVPE

Cited by 7 publications

References 19 publications

Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al0.7Ga0.3N Template by Low-Temperature Radio-Frequency Sputtering

Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al0.7Ga0.3N Template by Low-Temperature Radio-Frequency Sputtering

HVPE growth of Al_XGa_1-XN templates for UV-LED applications

Surface properties of AlN and Al x Ga1−x N epitaxial layers characterized by angle resolved X-ray photoelectron spectroscopy

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Effect of the growth temperature on the properties of AlxGal−xN epilayers grown by HVPE

Cited by 7 publications

References 19 publications

Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al0.7Ga0.3N Template by Low-Temperature Radio-Frequency Sputtering

Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al0.7Ga0.3N Template by Low-Temperature Radio-Frequency Sputtering

HVPE growth of AlXGa1-XN templates for UV-LED applications

Surface properties of AlN and Al x Ga1−x N epitaxial layers characterized by angle resolved X-ray photoelectron spectroscopy

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HVPE growth of Al_XGa_1-XN templates for UV-LED applications