2008
DOI: 10.1080/10584580802088975
|View full text |Cite
|
Sign up to set email alerts
|

EFFECT OF THE OXYGEN ADDITION IN THE SPUTTERING GAS ON THE DIELECTRIC PROPERTIES OF a-BaTiO3 FILMS

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2015
2015
2019
2019

Publication Types

Select...
3

Relationship

0
3

Authors

Journals

citations
Cited by 3 publications
(1 citation statement)
references
References 16 publications
0
1
0
Order By: Relevance
“…In principle, BaTiO 3 ceramics with a dense structure and fine grains has very good dielectric properties. The BaTiO 3 thin films with perovskite structure are of particular interest for electronic device applications due to their useful ferroelectric properties [1][2][3]. Many attempts have been tried to * E-mail: chbhosale@gmail.com integrate the ferroelectric thin films of BaTiO 3 to design non-volatile memory devices and integrated transducers [4,5].…”
Section: Introductionmentioning
confidence: 99%
“…In principle, BaTiO 3 ceramics with a dense structure and fine grains has very good dielectric properties. The BaTiO 3 thin films with perovskite structure are of particular interest for electronic device applications due to their useful ferroelectric properties [1][2][3]. Many attempts have been tried to * E-mail: chbhosale@gmail.com integrate the ferroelectric thin films of BaTiO 3 to design non-volatile memory devices and integrated transducers [4,5].…”
Section: Introductionmentioning
confidence: 99%