Effect of the substrate on the growth of spinel iron oxide thin films by metal-organic chemical vapor deposition

Kuribayashi, Kiyoshi; Ueyama, Ryousuke

doi:10.1016/s0040-6090(96)09102-x

Cited by 15 publications

(9 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Due to the delicate interplay between precursor chemistry and material properties, reproducible CVD processes rely on the availability of suitable molecular sources, whose main requirements are an appreciable volatility, a high thermal stability and a clean decomposition pathway [6,[28][29]. To this aim, various iron compounds have been adopted in CVD applications, such as halogenated salts [7][8][9], Fe(CO) 5 [12,20,22,30], ferrocene and its derivatives [21,28,31], iron alkoxides [1,6] and conventional β-diketonates [3,29,[32][33][34]. In spite of these efforts, the design of improved Fe precursors matching all the above criteria is still highly demanded [31,35].…”

Section: Introductionmentioning

confidence: 99%

An iron(II) diamine diketonate molecular complex: Synthesis, characterization and application in the CVD of Fe2O3 thin films

Barreca

Carraro

Gasparotto

et al. 2012

Inorganica Chimica Acta

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

An iron(II) diamine diketonate molecular complex: Synthesis, characterization and application in the CVD of Fe2O3 thin films

Barreca

Carraro

Gasparotto

et al. 2012

Inorganica Chimica Acta

View full text Add to dashboard Cite

“…Amongst the many applications and properties of this material photo catalysis, [1][2][3] sensors, [4,5] and an interesting magnetic behavior [6,7] can be mentioned. A variety of different methods has been used to deposit iron oxide thin films, e.g., sputtering, [4] sol-gel, [5] aqueous chemical growth, [3] molecular beam epitaxy (MBE), [8] CVD, [9,10] and ALD. [11][12][13][14] There are also numerous reports of nanostructured iron oxide.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Iron Oxide Thin Films and Nanotubes using Ferrocene and Oxygen as Precursors

Rooth

Johansson

Kukli

et al. 2008

Chemical Vapor Deposition

View full text Add to dashboard Cite

Thin films and nanotubes of iron oxide are deposited using atomic layer deposition (ALD) on Si(100) and anodic aluminum oxide (AAO), respectively. Ferrocene, Fe(Cp) 2 , and oxygen are used as precursors. Successful depositions are carried out in the temperature range 350-500 -C on Si(100), while all depositions on AAO are made at 400 -C. The growth per cycle values are around 0.14 nm on Si(100) in the temperature range 350-500 -C and 0.06 nm on AAO. Below 500 -C, the iron oxide crystallizes as a phase mixture on both types of substrates. One of the phases is identified as the rhombohedral Fe 2 O 3 phase (hematite), but the second phase cannot be unambiguously identified. Above 500 -C, only phase pure hematite is detected. For deposition of nanotubes, in-house made AAO membranes are used, having an aspect ratio of 30. By etching of the AAO membranes after deposition, free-standing nanotubes retaining the order of the AAO template can be fabricated.

show abstract

“…Using the same precursor with oxygen in a low-pressure ͑400 Pa͒ CVD reactor, Kuribayashi et al reported growth rates of about 1-4 nm/min at 500°C for different flow rates of oxygen. 26 Lee et al observed very high deposition rates ͑80-160 nm/min͒ using Fe͑CO͒ 5 with oxygen in the temperature range 80-350°C. 19 Pflitsch et al observed growth rates ranging from 35 to 120 nm/min using ferrocene and oxygen at a pressure of 55 mbar and temperature in the range of 400-750°C.…”

Section: Resultsmentioning

confidence: 99%

Low-Pressure Metallorganic Chemical Vapor Deposition of Fe[sub 2]O[sub 3] Thin Films on Si(100) Using n-Butylferrocene and Oxygen

Singh¹,

Yang²,

Takoudis

2008

J. Electrochem. Soc.

View full text Add to dashboard Cite

␣-Fe 2 O 3 thin films have been deposited on Si͑100͒ substrates using n-butylferrocene and oxygen in a low-pressure metallorganic chemical vapor deposition reactor. The iron precursor is liquid at room temperature having a high enough vapor pressure; its thermogravimetric analysis shows that it undergoes clean evaporation without decomposition. The growth rates were studied in the temperature range of 400-600°C. The resulting thin films were characterized for structure and morphology using X-ray diffraction and scanning electron microscopy. Their composition was analyzed using energy-dispersive X-ray spectroscopy, and chemical bonding states were probed using X-ray photoelectron spectroscopy. Films deposited at 450°C were mostly noncrystalline and had carbon contamination. Films deposited at higher temperatures were crystalline ␣-Fe 2 O 3 .

show abstract

Effect of the substrate on the growth of spinel iron oxide thin films by metal-organic chemical vapor deposition

Cited by 15 publications

References 11 publications

An iron(II) diamine diketonate molecular complex: Synthesis, characterization and application in the CVD of Fe2O3 thin films

An iron(II) diamine diketonate molecular complex: Synthesis, characterization and application in the CVD of Fe2O3 thin films

Atomic Layer Deposition of Iron Oxide Thin Films and Nanotubes using Ferrocene and Oxygen as Precursors

Low-Pressure Metallorganic Chemical Vapor Deposition of Fe[sub 2]O[sub 3] Thin Films on Si(100) Using n-Butylferrocene and Oxygen

Contact Info

Product

Resources

About