Effect of the ZnO Buffer Layer Thickness on AZO Film Properties

Abstract

To evaluate the influence of the ZnO buffer layer thickness on structural, electrical and optical properties of ZnO: Al (AZO)/ZnO bi-layer films, a series of AZO/ZnO films were deposited on the quartz substrates by electron beam evaporation. X-ray diffraction measurement shows that the crystal quality of the films is improved with the increase of the film thickness. The electrical properties results show that the resistivity decreases initial and then increases. However, optical transmittance of all the films is >80% regardless of the buffer layer thickness in the visible region. The results illustrate that the insertion of ZnO buffer layer can improve the film performance.

Composition Effect of Poly(3,4-Ethylenedioxythiophene):Poly(Styrene Sulphonic Acid) and Polyaniline to Dispersion and Optical Properties of Polymer Blends

“…From the graph shown, sample S5 have the lowest reflectance percentage of approaching 60 percent and followed by S4 (80 percent) and S3 (85percent). However, S2 and S1 are in the range of 90 percent that represent high crystal quality of the film [9]. It is also observed that the percentage of reflectance spectra for a small photon energy of these five samples are increasing as the PANi concentration in the sample decrease.…”

Zinc Oxide Thin Film Morphology as Function of Substrate Position During Sputtering Process

“…Various solutions are currently studied. The first approach, based on classical well mastered deposition methods, [2] is oriented towards the doping of n-type semiconductors to obtain optimized layers, for example Al-doped ZnO (AZO) [3] or F-doped SnO2 (FTO) oxides. A second approach concerns the application of new techniques or modifications of existing ones to be applied for the nano-structuring of these TCO layers.…”