Effect of thermal annealing on the optical properties of Ge20Se65S15 thin films

Dongol, M.; Elhady, A.F.; Ebied, M.S.; Abuelwafa, Amr Attia

doi:10.1007/s12648-020-01787-3

Cited by 29 publications

(18 citation statements)

References 43 publications

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“…This two-photon absorption (TPA) is mainly a third-order nonlinear phenomenon in which the absorption of two or a pair of photons takes place with simultaneous excitation of an electron from the ground state to higher-energy states. 65 In semiconductors, the efficiency of this TPA process, known as the nonlinear absorption coefficient (β c ), depends on the optical bandgap (E g ) and photon energy (hυ) under then condition E g /2 ≤ hυ ≤ E g . Here in our case, it satisfies this condition.…”

Section: Refractive Index (N) Dispersionmentioning

confidence: 99%

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb₄₀Se₂₀S₄₀ Thin Films at Different Fluences for Photonic Devices

Priyadarshini¹,

Alagarasan

Ganesan

et al. 2022

ACS Appl. Opt. Mater.

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This study investigates the effects of 30 keV proton ion irradiation on the structural, morphological, and linear–nonlinear optoelectronic properties of Sb40Se20S40 thin films. The retention of an amorphous nature and vibrational bonding rearrangements caused by ion irradiation demonstrate structural tailoring. The cumulative decrease in roughness with an increase in ion dose decreases the surface energy and optical absorption loss. With the blue shifting of the absorption edges, proton irradiation increased the optical transmittance and reflectance. The variation of fluence changes the optical bandgap and Urbach energy, which are induced by local structural changes caused by defects and disorder. The refractive index decreased considerably, which supports the Moss rule. Proton irradiation reduced the interband transition and average band energy gap of the system. However, ion irradiation increased optical losses while decreasing optical conductivity and dielectric characteristics. The third-order nonlinear susceptibility and nonlinear refractive index decreased significantly as the fluence increased. Such materials with optical tuning capabilities via ion fluence are essential for cutting-edge photonic and optoelectronic applications.

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Section: Refractive Index (N) Dispersionmentioning

confidence: 99%

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb₄₀Se₂₀S₄₀ Thin Films at Different Fluences for Photonic Devices

Priyadarshini¹,

Alagarasan

Ganesan

et al. 2022

ACS Appl. Opt. Mater.

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“…In this nonlinear phenomenon, an electron is simultaneously stimulated from its ground state to higher states, and two or more photons are absorbed. 69 Thus the nonlinear absorption coefficient ( β c ) can be defined as the efficiency of two-photon absorption in semiconductor materials which further depends on optical bandgap ( E g ) and photon energy ( hν ). The nonlinear absorption coefficient is calculated by using the following relation, 70 …”

Section: Resultsmentioning

confidence: 99%

Influence of time dependent laser-irradiation for tuning the linear–nonlinear optical response of quaternary Ag₁₀In₁₅S₁₅Se₆₀ films for optoelectronic applications

Parida¹,

Alagarasan

Ganesan

et al. 2023

RSC Adv.

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“…The obtained values of WDD dispersion parameters (E o ,E d and ε ∞ ) for SnO/ PET thin film are 1.63, 12.3, and 8.56 eV, respectively. In a transparent region, the impact of lattice vibration modes of dispersion and the free carriers is as given in the following relation [29]:…”

Section: Resultsmentioning

confidence: 99%

Morphological, structural, and optical properties of flexible Tin Oxide(II) thin film via thermal evaporation technique

et al. 2022

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Tin oxide compounds have been highly studied due to their important properties. Tin Oxide (II) SnO compound is considered an ideal p-type conductive material, with large p-type carrier mobility. It is getting a lot of attention in next-generation electronic applications. In this work, the SnO thin film was deposited on the polyethylene terephthalate (PET) substrate by the thermal evaporation method. The X-ray diffraction pattern revealed the amorphous structure of the SnO/PET thin film. The purity of the SnO/PET film was confirmed using the Raman spectrum. An atomic force microscope was carried out to investigate the topography (roughness and particle size) of the obtained SnO thin film. The optical band gap $$E_{{\text{g}}}^{{{\text{Opt}}}}$$ E g Opt for SnO/PET thin film in the absorption region was estimated using Tauc’s equation. The refractive index for the SnO/PET thin film was estimated at the normal dispersion range by a single oscillator model. The dielectric optical properties of the SnO/PET thin film were estimated. The calculated third-order nonlinear susceptibility χ(3) and nonlinear refractive index n(2) were in the order of ~ 10−10 and ~ 10−9esu, respectively, within the photon energy range (0.5 to 4 eV). The Sheik–Bahae model was used to determine the nonlinear absorption coefficient βc for SnO/PET thin film. Based on these detailed results, the high nonlinear optical parameters pave the way for the probability of using the SnO/PET in flexible optoelectronics devices. Graphical abstract

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Effect of thermal annealing on the optical properties of Ge20Se65S15 thin films

Cited by 29 publications

References 43 publications

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb₄₀Se₂₀S₄₀ Thin Films at Different Fluences for Photonic Devices

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb₄₀Se₂₀S₄₀ Thin Films at Different Fluences for Photonic Devices

Influence of time dependent laser-irradiation for tuning the linear–nonlinear optical response of quaternary Ag₁₀In₁₅S₁₅Se₆₀ films for optoelectronic applications

Morphological, structural, and optical properties of flexible Tin Oxide(II) thin film via thermal evaporation technique

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Effect of thermal annealing on the optical properties of Ge20Se65S15 thin films

Cited by 29 publications

References 43 publications

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb40Se20S40 Thin Films at Different Fluences for Photonic Devices

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb40Se20S40 Thin Films at Different Fluences for Photonic Devices

Influence of time dependent laser-irradiation for tuning the linear–nonlinear optical response of quaternary Ag10In15S15Se60 films for optoelectronic applications

Morphological, structural, and optical properties of flexible Tin Oxide(II) thin film via thermal evaporation technique

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Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb₄₀Se₂₀S₄₀ Thin Films at Different Fluences for Photonic Devices

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb₄₀Se₂₀S₄₀ Thin Films at Different Fluences for Photonic Devices

Influence of time dependent laser-irradiation for tuning the linear–nonlinear optical response of quaternary Ag₁₀In₁₅S₁₅Se₆₀ films for optoelectronic applications