Effect of thermocouple position on temperature field in nitride MOCVD reactor

Li, Zhiming; Li, Jinping; Jiang, Haiying; Han, Yu; Yin, Jingzhou; Xia, Yingjie; Chang, Yongming; Zhang, Jincheng

doi:10.1016/j.jcrysgro.2013.01.005

Cited by 12 publications

(4 citation statements)

References 22 publications

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“…19 Thus, we designed a process to deposit CI on the CF surface to fabricate a new CF-CI composite with core-shell structures that possesses the advantages of these two materials by using the metal organic chemical vapor deposition (MOCVD) method, which has low deposition temperature, fast and exible deposition rate, and controllable synthetic material composition. 20 This new composite might obtain remarkable EMW absorption through thin and low-mass density layer absorbers in the entire 2 to 18 GHz frequency range. The morphology, complex permittivity and permeability, and EMW absorption of the composites are investigated.…”

Section: Introductionmentioning

confidence: 99%

Design and fabrication of carbon fiber/carbonyl iron core–shell structure composites as high-performance microwave absorbers

Yuan

Liu

et al. 2015

RSC Adv.

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Section: Introductionmentioning

confidence: 99%

Design and fabrication of carbon fiber/carbonyl iron core–shell structure composites as high-performance microwave absorbers

Yuan

Liu

et al. 2015

RSC Adv.

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“…We assume that the initial environmental temperature is 293 K. For the material parameters of graphite, H2, the quartz tube, and SiC, the reader is referred to Ref. [14]; for those of the cooper coil and insulation material wafer, the reader is referred to Ref. [15].…”

Section: Computational Modeling (A) 3d Modeling Of Reactormentioning

confidence: 99%

Temperature Field Simulation and optimization for Horizontal 6-inch 4H-SiC Epitaxial CVD Reactor by Induction Heating

Tang

Tian

Mao

et al. 2023

2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and

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Silicon carbide (SiC) epitaxial process is a key step in the fabrication of power devices, and the temperature field inside the reactor chamber plays an essential role in this process. In this paper, the temperature field in the horizontal chemical-vapor-deposition reactor chamber used for growing homo-epitaxial 4H-SiC material is studied using the finite-element method. A threedimensional time-dependency model is built for the accuracy of simulation, and the effects of 11 relative coil

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“…The most widely used radiation temperature measurement method is based on Planck's blackbody radiation law and requires accurate measurement of the emissivity of the wafer before measurement. The latter mainly refers to the use of thermocouples [19], [20], [21], [22], [22], reactive resistors [23], and transistors [24], [25] as temperature sensors. Multiple sensors are formed into a sensor array on the wafer surface and connected to the external temperature of the process equipment via electrical wires to obtain the twodimensional temperature field distribution.…”

Section: Introductionmentioning

confidence: 99%

A Real-Time In Situ Wafer Temperature Measurement System Based on Fiber Bragg Grating Array

Feng,

Peng,

et al. 2024

IEEE Sensors J.

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Temperature is an essential parameter in the siliconbased MEMS fabrication process, and the uneven temperature distribution on a wafer surface could significantly impact the whole fabrication process. This research aims to observe the wire bonding system's heating process from 30 ℃ to 110 ℃ . A temperature sensor network consisting of multiple fiber Bragg gratings (FBG) is proposed for real-time wafer surface temperature monitoring. The temperature points measured by FBG sensors are used to construct the temperature distribution of the entire battery surface, enabling tracking of the hotspots during the heating processes. Additionally, a comparative analysis of the FBG sensor network's results was conducted using those gathered by infrared thermal imager and thermocouple sensors. The results indicate the existence of a temperature gradient along the wafer's surface in the radial direction, with a maximum temperature difference of 11.94°C and the temperature distribution taking the shape of approximate concentric circles. The FBG sensor network offers a clear and intuitive illustration of the wafer's surface temperature distribution during heating, providing realtime responses. Therefore, the proposed temperature measurement network based on FBG sensors can effectively monitor the temperature defects on the wafer surface during the MEMS process.

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Effect of thermocouple position on temperature field in nitride MOCVD reactor

Cited by 12 publications

References 22 publications

Design and fabrication of carbon fiber/carbonyl iron core–shell structure composites as high-performance microwave absorbers

Design and fabrication of carbon fiber/carbonyl iron core–shell structure composites as high-performance microwave absorbers

Temperature Field Simulation and optimization for Horizontal 6-inch 4H-SiC Epitaxial CVD Reactor by Induction Heating

A Real-Time In Situ Wafer Temperature Measurement System Based on Fiber Bragg Grating Array

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