Effect of thermomigration on evolution of interfacial intermetallic compounds in Cu/Sn/Cu and Cu/Sn0.7Cu/Cu solder joints

Wei, Guoqiang; Du, L. C.; Jia, Y. P.; Liang, Qingcheng

doi:10.1007/s10854-015-2984-5

Cited by 13 publications

(3 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The temperature gradient exists since the microbumps undergo thermal compression bonding and reflow as a function of different thermal conductivities of the substrate, chips and solder [ 115 ]. Table 3 summarizes the asymmetrical growth of IMCs, whereby Cu atoms are migrating from the hot to the cold side [ 116 ].…”

Section: Reliability Issues Concerning Imcsmentioning

confidence: 99%

Intermetallic compounds in 3D integrated circuits technology: a brief review

Annuar

Mahmoodian

Hamdi

et al. 2017

Science and Technology of Advanced Materials

View full text Add to dashboard Cite

The high performance and downsizing technology of three-dimensional integrated circuits (3D-ICs) for mobile consumer electronic products have gained much attention in the microelectronics industry. This has been driven by the utilization of chip stacking by through-Si-via and solder microbumps. Pb-free solder microbumps are intended to replace conventional Pb-containing solder joints due to the rising awareness of environmental preservation. The use of low-volume solder microbumps has led to crucial constraints that cause several reliability issues, including excessive intermetallic compounds (IMCs) formation and solder microbump embrittlement due to IMCs growth. This article reviews technologies related to 3D-ICs, IMCs formation mechanisms and reliability issues concerning IMCs with Pb-free solder microbumps. Finally, future outlook on the potential growth of research in this area is discussed.

show abstract

Section: Reliability Issues Concerning Imcsmentioning

confidence: 99%

Intermetallic compounds in 3D integrated circuits technology: a brief review

Annuar

Mahmoodian

Hamdi

et al. 2017

Science and Technology of Advanced Materials

View full text Add to dashboard Cite

show abstract

“…Consuming more Gibbs free energy, stable Cu 3 Sn phase is formed by reaction 3.2 [28]. Therefore, the thickness of Cu 3 Sn layer will not vary in general except the occurrence of electromigration or thermomigration phenomenon in the service of the circuit [29][30][31][32]. The results show that the die only comprised three layers after annealing: Cu/Cu 3 Sn/Cu.…”

Section: Interfacial Analysismentioning

confidence: 94%

Low-temperature, short-time, wafer-level bonding for Cu/Sn/Cu solid-state-diffusion interconnect in 3-D integration

Li¹,

Wang²,

Li³

et al. 2023

Phys. Scr.

View full text Add to dashboard Cite

In this paper, Cu/Sn/Cu solid-state diffusion (SSD) under low temperature is proposed and investigated for three-dimensional (3-D) integration. Cu and Sn films were deposited by high-efficiency and low-cost physical vapor deposition to fabricate 40-µm-pitch daisy-chain structures. Subsequently, the Cu bump surface was treated with Ar (5% H2) plasma. The Cu/Sn/Cu structure was bonded face to face at 200 ℃ for 15 min. The interfacial composition of the as-bonded dies comprised five layers, Cu/Cu3Sn/Cu6Sn5/Cu3Sn/Cu, with no Sn remaining and no overflow. After annealing at 200 ℃ for 15 min under N2 atmosphere, as the Cu6Sn5 completely transformed into Cu3Sn, the microstructure changed to stable three layers: Cu/Cu3Sn/Cu. Additionally, the average bonding shear strength reached 27.0 MPa, which is higher than that for conventional Cu/Sn SSD bonding. The measured bonding resistance value was maintained at the theoretical value. Moreover, the parabolic growth constant of Cu3Sn reached 1.86×10−15 m2/s. Our study demonstrates the feasibility of using Cu/Sn/Cu SSD for low-temperature, short-time, wafer-level bonding.

show abstract

“…The traditional soldering condition refers to the interconnected height (solder thickness) of several hundreds of micrometers, the soldering time of merely several minutes and no application of pressure. Under the traditional soldering condition, joints with the conventional interfacial structure of Cu/Cu-Sn IMCs (Cu 6 Sn 5 , Cu 3 Sn)/solder/Cu-Sn IMCs (Cu 6 Sn 5 , Cu 3 Sn)/Cu are obtained (Gao et al , 2015; Koleňák and Kostolný, 2015; Koleňák et al , 2016; Li et al , 2016; Ma et al , 2017; Lin et al , 2018; Lee et al , 2003; Ma et al , 2014; Sun et al , 2017; Wei et al , 2015; Xiao et al , 2013; Zhao et al , 2016; Zhang and Zhang, 2009; Zhang et al , 2015). Actually, the relevant studies about solder joints mainly focus on joints with the conventional interfacial structure.…”

Section: Introductionmentioning

confidence: 99%

Shear strength and fracture mechanism for full Cu-Sn IMCs solder joints with different Cu₃Sn proportion and joints with conventional interfacial structure in electronic packaging

Yao

Han

et al. 2019

SSMT

View full text Add to dashboard Cite

Purpose This study aims to analyze the shear strength and fracture mechanism of full Cu-Sn IMCs joints with different Cu3Sn proportion and joints with the conventional interfacial structure in electronic packaging. Design/methodology/approach The Cu-Sn IMCs joints with different Cu3Sn proportion were fabricated through soldering Cu-6 μm Sn-Cu sandwich structure under the extended soldering time and suitable pressure. The joints of conventional interfacial structure were fabricated through soldering Cu-100 μm Sn-Cu sandwich structure. After the shear test was conducted, the fracture mechanism of different joints was studied through observing the cross-sectional fracture morphology and top-view fracture morphology of sheared joints. Findings The strength of joints with the conventional interfacial structure was 26.6 MPa, while the strength of full Cu-Sn IMCs joints with 46.7, 60.6, 76.7 and 100 per cent Cu3Sn was, respectively, 33.5, 39.7, 45.7 and 57.9 MPa. The detailed reason for the strength of joints showing such regularity was proposed. For the joint of conventional interfacial structure, the microvoids accumulation fracture happened within the Sn solder. However, for the full Cu-Sn IMCs joint with 46.7 per cent Cu3Sn, the cleavage fracture happened within the Cu6Sn5. As the Cu3Sn proportion increased to 60.6 per cent, the inter-granular fracture, which resulted in the interfacial delamination of Cu3Sn and Cu6Sn5, occurred along the Cu3Sn/Cu6Sn5 interface, while the cleavage fracture happened within the Cu6Sn5. Then, with the Cu3Sn proportion increasing to 76.7 per cent, the cleavage fracture happened within the Cu6Sn5, while the transgranular fracture happened within the Cu3Sn. The inter-granular fracture, which led to the interfacial delamination of Cu3Sn and Cu, happened along the Cu/Cu3Sn interface. For the full Cu3Sn joint, the cleavage fracture happened within the Cu3Sn. Originality/value The shear strength and fracture mechanism of full Cu-Sn IMCs joints was systematically studied. A direct comparison regarding the shear strength and fracture mechanism between the full Cu-Sn IMCs joints and joints with the conventional interfacial structure was conducted.

show abstract

Effect of thermomigration on evolution of interfacial intermetallic compounds in Cu/Sn/Cu and Cu/Sn0.7Cu/Cu solder joints

Cited by 13 publications

References 12 publications

Intermetallic compounds in 3D integrated circuits technology: a brief review

Intermetallic compounds in 3D integrated circuits technology: a brief review

Low-temperature, short-time, wafer-level bonding for Cu/Sn/Cu solid-state-diffusion interconnect in 3-D integration

Shear strength and fracture mechanism for full Cu-Sn IMCs solder joints with different Cu₃Sn proportion and joints with conventional interfacial structure in electronic packaging

Contact Info

Product

Resources

About

Effect of thermomigration on evolution of interfacial intermetallic compounds in Cu/Sn/Cu and Cu/Sn0.7Cu/Cu solder joints

Cited by 13 publications

References 12 publications

Intermetallic compounds in 3D integrated circuits technology: a brief review

Intermetallic compounds in 3D integrated circuits technology: a brief review

Low-temperature, short-time, wafer-level bonding for Cu/Sn/Cu solid-state-diffusion interconnect in 3-D integration

Shear strength and fracture mechanism for full Cu-Sn IMCs solder joints with different Cu3Sn proportion and joints with conventional interfacial structure in electronic packaging

Contact Info

Product

Resources

About

Shear strength and fracture mechanism for full Cu-Sn IMCs solder joints with different Cu₃Sn proportion and joints with conventional interfacial structure in electronic packaging