Effect of Trimethylsilylation on the Film Stress of Mesoporous Silica Ultralow-k Film Stacks

Chen, Jr Yu; Pan, Fu‐Ming; Lin, Da; Cho, An Thung; Chao, Kuei Jung; Chang, Li

doi:10.1149/1.2193074

Cited by 2 publications

(2 citation statements)

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“…Numerous studies on silica-based materials have investigated the replacement of terminal hydroxyl groups by methyl groups using TMCS ,− and HMDS, ,,,, and a few papers have reported results for zeolites. , For PSZ low- k films, several techniques have been developed to render the films hydrophobic. Wang et al used a postcalcination vapor-phase silylation step with TMCS, and both Li et al and Lew et al added hydrophobic silanes to the zeolite precursor solution to functionalize the zeolites with hydrophobic groups.…”

Section: Introductionmentioning

confidence: 99%

“…Numerous studies on silica-based materials have investigated the replacement of terminal hydroxyl groups by methyl groups using TMCS 24,[26][27][28][29][30][31][32][33] and HMDS, 23,24,26,34,35 and a few papers have reported results for zeolites. 36,37 For PSZ low-k films, several techniques have been developed to render the films hydrophobic.…”

Section: Introductionmentioning

confidence: 99%

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Hydrofluoric-Acid-Resistant and Hydrophobic Pure-Silica-Zeolite MEL Low-Dielectric-Constant Films

Lew

Liu²,

Day³

et al. 2009

Langmuir

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A new technique for the silylation of pure-silica-zeolite MEL low-k films has been developed in which the spin-on films are calcined directly in trimethylchlorosilane or 1,1,1,3,3,3-hexamethyldisilazane (HMDS) in order to protect the films against corrosive wet etch chemicals and ambient moisture adsorption. In an alternative procedure, HMDS is also added to the zeolite suspension before film preparation. Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, water-soak tests, and HF etch tests are performed to characterize the films. The dielectric constant is as low as 1.51, and the films resist HF attack up to 5.5 min. These properties are highly desirable by the semiconductor industry for next-generation microprocessors.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Hydrofluoric-Acid-Resistant and Hydrophobic Pure-Silica-Zeolite MEL Low-Dielectric-Constant Films

Lew

Liu²,

Day³

et al. 2009

Langmuir

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Thermal stability of molecularly functionalized mesoporous silica thin films

Singh

Gandhi

Moore

et al. 2007

Journal of Applied Physics

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We report the stability of ordered mesoporous silica (MPS) thin films functionalized with mercaptan- and cyanide-terminated organosilanes upon annealing at temperatures up to 500 °C in vacuum, nitrogen, and air. Electron spectroscopy analyses indicate that the molecules are attached to the surfaces of the films as well as the pores inside the films. The cyanide-functionalized MPS films are stable up to 500 °C in vacuum, N2, and air ambient. In contrast, mercaptan-functionalized MPS films are stable only up to 400 °C in vacuum due to the higher reactivity of mercaptan with oxygen. Our results provide insights into effects of temperature and gas environments on the properties of molecularly functionalized porous dielectrics, and would be important considerations for developing new options for interlayer electrical isolation of nanodevice wiring.

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Effect of Trimethylsilylation on the Film Stress of Mesoporous Silica Ultralow-k Film Stacks

Cited by 2 publications

References 29 publications

Hydrofluoric-Acid-Resistant and Hydrophobic Pure-Silica-Zeolite MEL Low-Dielectric-Constant Films

Hydrofluoric-Acid-Resistant and Hydrophobic Pure-Silica-Zeolite MEL Low-Dielectric-Constant Films

Thermal stability of molecularly functionalized mesoporous silica thin films

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