We present and discuss a comprehensive electrical\ud
model for Silicon Photomultipliers (SiPMs) based on a microcell\ud
able to accurately simulate the avalanche current build-up and\ud
the self-quenching of its Single-Photon Avalanche Diode (SPAD)\ud
“pixel” with series-connected quenching resistor. The entire SiPM\ud
is modeled either as an array of microcells, each one individually\ud
triggered by independent incoming photons, or as two macrocells,\ud
one with microcells all firing concurrently while the other one with\ud
all quiescent microcells; the most suitable approach depends on\ud
the light excitation conditions and on the dimension (i.e. number\ud
of microcells) of the overall SiPM. We validated both models by\ud
studying the behavior of SiPMs in different operating conditions,\ud
in order to study the effect of photons pile-up, the deterministic\ud
and statistical mismatches between microcells, the impact of\ud
the number of firing microcells vs. the total one, and the role of\ud
different microcell parameters on the overall SiPM performance.\ud
The electrical models were developed in SPICE and can simulate\ud
both custom-process and CMOS-compatible SiPMs, with either\ud
vertical or horizontal current-flow. The proposed simulation tools\ud
can benefit both SiPM users, e.g. for designing the best readout\ud
electronics, and SiPM designers, for assessing the impact of each\ud
parameter on the overall detection performance and electrical\ud
behavior