Effective and field-effect mobilities in Si MOSFETs

Kang, Jingoo; Schroder, D.K.; Alvarez, A.R.

doi:10.1016/0038-1101(89)90149-4

Cited by 28 publications

(11 citation statements)

References 2 publications

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“…[21] From the extrapolation of the linear part of the slope [22] (V G > 25 V), a threshold voltage, V T = 13.8 V, is determined. The Hall mobility, l H , of the LDDMOSFET Hall structure at V G = 25 V as a function of temperature, T, the effective mobility [23] l…”

Section: Hall-effect Investigations In the Channel Of 3c-sic Mosfetsmentioning

confidence: 99%

Fabrication and Characterization of 3C‐SiC‐Based MOSFETs

Schöner

Krieger

Pensl

et al. 2006

Chemical Vapor Deposition

110

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In this article, the electrical properties of 3C-SiC are described and its potential for metal-oxide semiconductor field-effect transistors (MOSFETs) is demonstrated. The density of traps, D IT , at the interface of 3C-SiC/SiO 2 capacitors is determined by the conductance method subsequent to various processing steps; the origin of the interface traps is discussed. Lateral and vertical 3C-SiC MOSFET devices of varying cell and device size are designed with hexagonal and squared cell geometry, and are fabricated side by side with MOS Hall bar structures. The electrical parameters of the MOSFETs are determined, and the free electron areal density and Hall mobility are measured in the channel of the MOS Hall bar structures. Based on the charge-sheet model, D IT is also obtained from the Hall investigations.

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Section: Hall-effect Investigations In the Channel Of 3c-sic Mosfetsmentioning

confidence: 99%

Fabrication and Characterization of 3C‐SiC‐Based MOSFETs

Schöner

Krieger

Pensl

et al. 2006

Chemical Vapor Deposition

110

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“…3(a) [15,17]. Therefore, attention should be paid more to μ eff at the on-state condition than μ FE near the threshold voltage.…”

Section: Resultsmentioning

confidence: 99%

Effective Channel Mobility of AlGaN/GaN-on-Si Recessed-MOS-HFETs

Kim¹,

Heo²,

Cha³

2016

JSTS:Journal of Semiconductor Technology and Science

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“…Elimination of these parasitic losses can be achieved by modifying either the composition of the dielectric [1,2] or the surface quality of the Si by, for example, amorphization via ion implantation or by depositing polysilicon or α-Si [3]. A valuable parameter for the characterization of such surface treatments, both for process development/control and for circuit simulation, is the charge carrier effective mobility at the interface [4], which together with the charge storage at the interface determines the sheet resistance, SH R , of the surface channel charge. In this paper, we present ring-gate MOSFET test structures for the direct determination of SH R as a function of the gate biasing conditions.…”

Section: Introductionmentioning

confidence: 99%

Ring-gate MOSFET test structures for measuring surface-charge-layer sheet resistance on high-resistivity-silicon substrates

Evseev

Nanver

Milosavljevic

2006

2006 IEEE International Conference on Microelectronic Test Structures

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Ring-gate MOSFET test structures have been developed with which a differential measurement technique can be used to accurately determine the surface-charge-layer sheet resistance on high-resistivity-silicon substrates. The difference in substrate properties and influence of special surface passivation techniques that are designed to suppress the otherwise conductive surface channel can thus be monitored and characterized for RF transmission line applications.

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Effective and field-effect mobilities in Si MOSFETs

Cited by 28 publications

References 2 publications

Fabrication and Characterization of 3C‐SiC‐Based MOSFETs

Fabrication and Characterization of 3C‐SiC‐Based MOSFETs

Effective Channel Mobility of AlGaN/GaN-on-Si Recessed-MOS-HFETs

Ring-gate MOSFET test structures for measuring surface-charge-layer sheet resistance on high-resistivity-silicon substrates

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