Effective channel length determination using punchthrough voltage

Nakanishi, Senichiro; Hoijer, M.; Saitoh, Yutaka; Katoh, Y.; Kojima, Y.; Kamiya, M.

doi:10.1109/icmts.1992.185941

Cited by 2 publications

(1 citation statement)

References 2 publications

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“…Apparently, shorter L g provides shorter path from the source to drain region which results to smaller effective channel length (L eff ). 36 This allows the current to transmit from the SD region in higher speed, hence reducing the threshold potential. The resistance become lesser in shorter path between the SD regions, hence leading to increasing I d .…”

Section: Impact Of Fin Geometrical Scalingmentioning

confidence: 99%

Optimization of 7 nm Strained Germanium FinFET Design Parameters Using Taguchi Method and Pareto Analysis of Variance

Othman

Azhari

Hatta

et al. 2018

ECS J. Solid State Sci. Technol.

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FinFET technology has emerged as an excellent alternative to planar MOSFET for sub-nanometer scaled technology processes in order to achieve high performance and low power. The geometrical parameters of FinFET are particularly sensitive to the devices' figure-of-merits. In this work, the effects of critical geometrical factors of the 7 nm strained germanium FinFET were systematically investigated by studying the resulting I-V characteristics, DIBL, and subthreshold swing. Variation of structure parameters are implemented and optimized using the Taguchi method signal-to-noise ratio with orthogonal arrays of L 27 (3 13 ) as well as Pareto analysis of variance to obtain the best combinations of parameters for each response performance. The results reveals that the nominal threshold voltage achieved for n-FinFET and p-FinFET are 0.146V and −0.152V respectively. It was observed that design variations were shown to affect n-FinFET more compared to p-FinFET. Drive current can be increased up to approximately 22% for an optimized I on performance, while leakage can be reduced up to 10 3 in I off optimization. Moreover, it is also observed from the Pareto analysis that the performance of FinFET is mainly affected by the dominant factors of fin length, top fin width, and the interaction of both for n-and p-FinFET by more than 50% for each response.

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Section: Impact Of Fin Geometrical Scalingmentioning

confidence: 99%

Optimization of 7 nm Strained Germanium FinFET Design Parameters Using Taguchi Method and Pareto Analysis of Variance

Othman

Azhari

Hatta

et al. 2018

ECS J. Solid State Sci. Technol.

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A novel extraction technique for the effective channel length of MOSFET devices

1995

IEEE Trans. Electron Devices

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A novel method using the charge pumping technique for extracting the effective channel length of MOSFET devices is presented, in which the effective area approach is used and the edges of the area are defined clearly. It is shown that the extracted effective channel length is independent of the measuring biases and the proposed new method is simple, accurate, and reliable, as compared to those using the I-V method. With the knowledge of the device dopant profiles, the extracted channel length with 0.01 pm accuracy can he achieved. Moreover, the proposed method is applicable to either n-or p-channel, conventional or LDD, surface or buried channel MOSFET's.

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Effective channel length determination using punchthrough voltage

Cited by 2 publications

References 2 publications

Optimization of 7 nm Strained Germanium FinFET Design Parameters Using Taguchi Method and Pareto Analysis of Variance

Optimization of 7 nm Strained Germanium FinFET Design Parameters Using Taguchi Method and Pareto Analysis of Variance

A novel extraction technique for the effective channel length of MOSFET devices

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