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Conventional HEMT devices perform poorly especially in the Ka band due to buffer electron spillage and poor confinement. Microwave and defense industries are key consumers of electronics and require transistors to be free from adverse effects namely current collapse in the drain for elevated power application. This work investigates the effects of graded AlInN barrier together with emerging quaternary material on device output in providing an alternate solution to industrial needs. The Aluminum mole fraction had been linearly increased along the graded section, with the addition of the AlInGaN back barrier. Improved current density and electric field demonstrate potential for high linearity application. The back barrier improves electron confinement in the channel while the effect of graded barrier was found to enhance output and transfer characteristics where the former incremented by almost 60% and the latter by around 1.9 A/mm, compared to conventional devices. Concentration of 2-dimensional electron gas (2DEG) had elevated by four times in the channel region with speed of electrons at 17.8 × 106 cms−1 in the back barrier. Overall, it has been demonstrated that the optimized AlInN/GaN-based HEMT shows excellent electrical characteristics and is a promising alternative to AlGaN/GaN HEMT for high frequency and high power application.

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FinFET technology has emerged as an excellent alternative to planar MOSFET for sub-nanometer scaled technology processes in order to achieve high performance and low power. The geometrical parameters of FinFET are particularly sensitive to the devices' figure-of-merits. In this work, the effects of critical geometrical factors of the 7 nm strained germanium FinFET were systematically investigated by studying the resulting I-V characteristics, DIBL, and subthreshold swing. Variation of structure parameters are implemented and optimized using the Taguchi method signal-to-noise ratio with orthogonal arrays of L 27 (3 13 ) as well as Pareto analysis of variance to obtain the best combinations of parameters for each response performance. The results reveals that the nominal threshold voltage achieved for n-FinFET and p-FinFET are 0.146V and −0.152V respectively. It was observed that design variations were shown to affect n-FinFET more compared to p-FinFET. Drive current can be increased up to approximately 22% for an optimized I on performance, while leakage can be reduced up to 10 3 in I off optimization. Moreover, it is also observed from the Pareto analysis that the performance of FinFET is mainly affected by the dominant factors of fin length, top fin width, and the interaction of both for n-and p-FinFET by more than 50% for each response.

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