Effective hydrogenation and surface damage induced by MW-ECR plasma of fine-grained polycrystalline silicon

Madi, D.; Prathap, P.; Focsa, A.; Slaoui, A.; Birouk, B.

doi:10.1007/s00339-010-5623-2

Cited by 6 publications

(3 citation statements)

References 29 publications

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“…On the other hand, preferential diffusion along grain boundaries upon laser processing at high scan speed cannot be ruled out, as it cannot be measured by SIMS. Figure 7 plots also the Suns-V oc curve of the laser and hydrogenated sample and it is shown that the curve is strongly shifted towards higher V oc values indicating an effective defect passivation by hydrogen atoms generated by plasma [15]. This improvement is witnessed by the very low values of the saturation current densities and the ideality factor close to 1 as reported in Table 1.…”

Section: Electronic Qualitymentioning

confidence: 63%

High-temperature laser annealing for thin film polycrystalline silicon solar cell on glass substrate

et al. 2012

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Thin film polycrystalline silicon films grown on glass substrate were irradiated with an infrared continuous wave laser for defects annealing and/or dopants activation. The samples were uniformly scanned using an attachment with the laser system. Substrate temperature, scan speed and laser power were varied to find suitable laser annealing conditions. The Raman spectroscopy and Suns-V c analysis were carried out to qualify the films quality after laser annealing. A maximum enhancement of the open circuit voltage V c of about 100 mV is obtained after laser annealing of as-grown polysilicon structures. A strong correlation was found between the full width half maximum of the Si crystalline peak and V c. It is interpreted as due to defects annealing as well as to dopants activation in the absorbing silicon layer. The maximum V c reached is 485 mV after laser treatment and plasma hydrogenation, thanks to defects passivation

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Section: Electronic Qualitymentioning

confidence: 63%

High-temperature laser annealing for thin film polycrystalline silicon solar cell on glass substrate

et al. 2012

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“…This situation is probably related to the accumulation of molecular hydrogen beneath the n + surface, which strongly hinders the hydrogen diffusion in the bulk [17,35]. As reported in other works [38,39], the improvement in open circuit voltage after hydrogenation is mainly due to the neutralization or passivation of defects at grain boundaries and inside the grains (dislocations) of polycrystalline silicon films. This is accomplished by the fact that high doses of atomic hydrogen diffuse across the surface of the n + emitter into the silicon volume from the plasma environment.…”

Section: Defects Passivation Behaviormentioning

confidence: 89%

Phosphorus deactivation mechanisms by hydrogenation in the n+ emitter region and its effect on defects passivation in n+pp+ poly-silicon solar cells

Ouldamer,

Belfennache,

Madi

et al. 2024

JOR

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Doping level of the n+ emitter region is an essential parameter that controls the performance of the n+ pp+ poly-silicon solar cells. Also, most poly-silicon n+ pp+ solar cell manufacturers apply hydrogenation from the phosphorus emitter n+ side to improve photovoltaic efficiency. Although hydrogen can passivate defects as well as it changes initial phosphorus doping level through phosphorus-hydrogen complex formation. Consequently, phosphorus deactivation can have a harmful effect on photovoltaic efficiency. In this context, the primary purpose of this work is to investigate the phosphorus deactivation in n+ emitter region and its effect on defects passivation of hydrogenated n+ pp+ poly-silicon solar cells. To do this, hydrogenation is performed by microwave plasma discharge involving an electron cyclotron resonance system. Besides, hydrogen passivates defects in poly-silicon, at the same time it deactivates phosphorus. For this reason, we have chosen to separate these simultaneous effects. So, we performed phosphorus deactivation on Schottky diodes-based mono-silicon, while defect passivation was operated in n+ pp+ poly-silicon solar cells. Our results reveal that hydrogen effectively deactivates phosphorus dopant. This effect is deeper in Schottky diodes with low initial phosphorus doping level where hydrogen diffuses easily in the bulk. This behavior is clearly revealed in open circuit-voltage values (Voc) measured on n+ pp+ samples. In fact, solar cells with low phosphorus concentration in n+ region revealed 319 mV compared to 230 mV for high doping level. Also, all n+ pp+ poly-silicon solar cells show a saturation of Voc at high microwave plasma power. Reasons for such case were explained and discussed in detail.

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“…13 Depositing SiN x :H onto the surface of polysilicon is the most widely used passivation way in virtually all solar cells (laboratory and industrial). In order to make H diffusing into the materials, a thermal annealing should be performed.…”

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confidence: 99%

Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation

Zhou¹,

Xu²,

Lambert³

et al. 2015

j nanosci nanotechnol

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The light absorption of polysilicon planar junctions can be improved using nanostructured top surfaces due to their enhanced light harvesting properties. Nevertheless, associated with the higher surface, the roughness caused by plasma etching and defects located at the grain boundary in polysilicon, the concentration of the recombination centers increases, leading to electrical performance deterioration. In this work, we demonstrate that wet oxidation combined with hydrogen passivation using SiN(x):H are the key technological processes to significantly decrease the surface recombination and improve the electrical properties of nanostructured n(+)-i-p junctions. Nanostructured surface is fabricated by nanosphere lithography in a low-cost and controllable approach. Furthermore, it has been demonstrated that the successive annealing of silicon nitride films has significant effect on the passivation quality, resulting in some improvements on the efficiency of the Si nanostructure-based solar cell device.

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Effective hydrogenation and surface damage induced by MW-ECR plasma of fine-grained polycrystalline silicon

Cited by 6 publications

References 29 publications

High-temperature laser annealing for thin film polycrystalline silicon solar cell on glass substrate

High-temperature laser annealing for thin film polycrystalline silicon solar cell on glass substrate

Phosphorus deactivation mechanisms by hydrogenation in the n+ emitter region and its effect on defects passivation in n+pp+ poly-silicon solar cells

Enhancement of Electrical Properties of Nanostructured Polysilicon Layers Through Hydrogen Passivation

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