Effective minority carrier lifetime as an indicator for potential-induced degradation in p-type single-crystalline silicon photovoltaic modules

Islam, Mohammad Aminul; Nguyen, Dong; Ishikawa, Yasuaki

doi:10.7567/1347-4065/ab3f06

Cited by 4 publications

(5 citation statements)

References 40 publications

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“…The microwave photo‐conductance decay (μ‐PCD) signal curves and τ eff values of solar cells were directly measured by a commercially available μ‐PCD measurement system (WT‐1000B, Semilab Inc.) with an applied laser wavelength of 904 nm. The μ‐PCD measurement system could be used as a method that indicates the PID behavior of c‐Si solar cells, as reported in some publications 9,18 …”

Section: Methodsmentioning

confidence: 99%

Recover possibilities of potential induced degradation caused by the micro‐cracked locations in p‐type crystalline silicon solar cells

Nguyen

Ishikawa

Uraoka

2020

Progress in Photovoltaics

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Potential induced degradation (PID) has been affecting the performance, durability, and reliability of crystalline Si solar cells/modules. The authors demonstrate that micro‐cracks also act as the additional recombination centers, which reduce short‐circuit current density (Jsc), open‐circuit voltage (Voc), and the effective lifetime of carriers in solar cells, in PID condition. This hypothesis was confirmed by external quantum efficiency measurements and microwave photo‐conductance decay method at the micro‐cracked areas before and after PID stress tests. In addition, the PID recovery was made significantly but non‐fully for the laminated micro‐cracked modules owing to the electrical PID recovery method. In addition, the authors showed and discussed the challenging problems in recovering the performance of the PID‐affected micro‐cracked solar modules without lamination. The achieved results from 11 cycles of PID stress/recovery tests with the same duration of PID stress and recovery processes showed that an exponentially decreasing function fits the correlation between the relative losses of Pmax, Voc, fill factor (FF), and Jsc due to the PID stress process and the number of the PID stress/recovery cycles. This provides a model for the estimation of the relative losses of Pmax, Voc, FF, and Jsc due to the PID stress process versus the number of the PID stress/recovery cycles. Finally, based on the decreasing tendency in the performance loss of the PID‐affected laminated micro‐cracked solar modules after PID stress/recovery cycles, the authors suggest that cyclic PID tests with suitable conditions might be a reasonable approach to control PID.

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Section: Methodsmentioning

confidence: 99%

Recover possibilities of potential induced degradation caused by the micro‐cracked locations in p‐type crystalline silicon solar cells

Nguyen

Ishikawa

Uraoka

2020

Progress in Photovoltaics

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“…Effective minority carrier lifetime was measured by the microwave-detected photoconductance decay (μ-PCD) method and the detail is shown elsewhere. 32)…”

Section: Experimental Methodsmentioning

confidence: 99%

Influence of shadow on shunt-type potential-induced degradation for crystalline Si photovoltaic modules exposed outdoors

Masuda

Tachibana

Toyoda

et al. 2020

Jpn. J. Appl. Phys.

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Potential-induced degradation (PID) was observed for crystalline Si photovoltaic (PV) modules set at a PID test system constructed outdoors. It was clearly shown that partial shadow and periodical water spray during daytime accelerate PID generation. PID easily occurred just underneath the shielding plate. It was also found that when a large part of one cell in the PV module was shadowed, PID is accelerated; however, when a small part of one cell in the PV module was shadowed or when the weak light is uniformly irradiated, less PID acceleration is observed. Simulation was also carried out for discussing the influence of light irradiation. These findings suggest that UV irradiation during the PID indoor test is essential for the exact estimation of the acceleration factor of the indoor PID test.

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“…Another advantage of the usage of μ-PCD is that it can be a portable system and available outdoors. 30) μ-PCD will be utilized for the evaluation of perovskite/Si PV modules in the large-scale PV power plants or other installed sites. This is an advantage of μ-PCD over TRPL, which is also widely used for the carrier lifetime measurement of perovskite films.…”

Section: -2mentioning

confidence: 99%

“…Microwave photoconductivity decay (μ-PCD) has been widely used as a conventional, non-contact, and non-destructive method for the evaluation of the minority carrier lifetime of Si wafers. [27][28][29][30][31] A pulse light irradiation generates excess carriers in an absorber, which enhances the reflection of the microwave. The recombination of the excess carriers results in a decrease in microwave reflection, and a carrier lifetime can be evaluated from the decay of the microwave reflection.…”

mentioning

confidence: 99%

“…μ-PCD is applicable not only for bare Si wafers but for laminated Si wafers and cells. 30,31) Furthermore, μ-PCD can be used also for the characterization of thin films by using a high-sensitivity system-differential μ-PCD. 28,29) In the differential μ-PCD, microwave reflections are measured at two neighboring positions with and without excess carrier excitation, resulting in higher sensitivity by taking the difference in microwave reflection intensity at the two positions.…”

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confidence: 99%

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Carrier lifetime measurement of perovskite films by differential microwave photoconductivity decay

Ohdaira¹,

Tu²,

Shimazaki³

et al. 2022

Jpn. J. Appl. Phys.

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We measure the minority carrier lifetime of perovskite films by differential microwave photoconductivity decay (µ-PCD). Clear decay curves can be detected from bare and laminated methylammonium lead iodide (MAPbI3) films by the differential µ-PCD. The degradation of the bare and laminated MAPbI3 films under air exposure at room temperature is clearly observed as the continuous change of the decay curves. The differential µ-PCD can thus be a quick and non-destructive method for the characterization of the electrical quality of perovskite films and modules.

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Effective minority carrier lifetime as an indicator for potential-induced degradation in p-type single-crystalline silicon photovoltaic modules

Cited by 4 publications

References 40 publications

Recover possibilities of potential induced degradation caused by the micro‐cracked locations in p‐type crystalline silicon solar cells

Recover possibilities of potential induced degradation caused by the micro‐cracked locations in p‐type crystalline silicon solar cells

Influence of shadow on shunt-type potential-induced degradation for crystalline Si photovoltaic modules exposed outdoors

Carrier lifetime measurement of perovskite films by differential microwave photoconductivity decay

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