2018
DOI: 10.1007/s12274-018-2215-5
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Effective N-methyl-2-pyrrolidone wet cleaning for fabricating high-performance monolayer MoS2 transistors

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Cited by 15 publications
(13 citation statements)
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“…We therefore, employed only acetone and NMP since their effects on graphene's quality are well studied. [48][49][50][51] Since the used GNR growth substrates do not exceed 5x5 mm in size, after fabrication the chip is broken into smaller pieces with 100-200 devices each before the GNRs to target substrate transfer.…”
Section: Graphene Electrodesmentioning
confidence: 99%
“…We therefore, employed only acetone and NMP since their effects on graphene's quality are well studied. [48][49][50][51] Since the used GNR growth substrates do not exceed 5x5 mm in size, after fabrication the chip is broken into smaller pieces with 100-200 devices each before the GNRs to target substrate transfer.…”
Section: Graphene Electrodesmentioning
confidence: 99%
“…Figure shows the deconvoluted Mo 3d, S 2p, and Sn 3d spectra of the MoS 2 and defect-free and defect-rich MoS 2 /SnS 2 nanosheet cocatalysts. The MoS 2 doublet Mo 3d 3/2 and Mo 3d 5/2 peaks were found to be 232.9 and 229.7 eV, respectively . The S 2s peak was attributed to 226.8 eV .…”
Section: Resultsmentioning
confidence: 88%
“…Continuous monolayer MoS 2 films were deposited on a sapphire substrate via chemical vapor deposition (CVD) by using sulfuring MoO 3 powder at 750 °C. We then transferred a continuous monolayer of MoS 2 from sapphire to GFNO using the poly­(methyl methacrylate) (PMMA) assist wet transfer process . Following removal of the PMMA using acetone, the MoS 2 /GFNO was annealed at 400 °C.…”
Section: Methodsmentioning
confidence: 99%
“…We then transferred a continuous monolayer of MoS 2 from sapphire to GFNO using the poly(methyl methacrylate) (PMMA) assist wet transfer process. 57 Following removal of the PMMA using acetone, the MoS 2 /GFNO was annealed at 400 °C. A Pt capping layer was deposited using a lift-off photolithography process to serve as an electrode for device characterization (active electrode area of 100 μm in diameter).…”
Section: ■ Experimental Sectionmentioning
confidence: 99%