Effective passivation of p+ and n+ emitters using SiO2/Al2O3/SiNx stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells

Huang, Haojun; Modanese, Chiara; Sun, Shantong; Gastrow, Guillaume von; Wang, Jianbo; Pasanen, Toni P.; Li, Shuo; Wang, Lichun; Bao, Yameng; Zhu, Zhen; Sneck, Sami; Savin, Hele

doi:10.1016/j.solmat.2018.07.007

Cited by 40 publications

(19 citation statements)

References 170 publications

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“…Since the eighties, hydrogenated silicon nitride SiN x :H thin films (abbreviated to SiN x in the following) have become essential for the crystalline silicon (Si) photovoltaic industry . Indeed, SiN x layers obtained by low pressure plasma‐enhanced chemical vapor deposition (LP‐PECVD) at low temperature (≤400°C) are almost exclusively used as antireflective coatings (ARC) for current mainstream Al‐BSF Si solar cells as well as for the strongly emerging solar cell architectures such as passivated emitter and rear cell (PERC), passivated emitter and rear totally diffused cells (PERT), or interdigitated back contact (IBC) solar cells . In addition to almost ideal optical properties, a major strength of SiN x films is their remarkable passivation properties.…”

Section: Introductionmentioning

confidence: 99%

Efficient silicon nitride SiN_x:H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells

Lelièvre

Kafle

Saint‐Cast

et al. 2019

Progress in Photovoltaics

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This work demonstrates the efficient optical and passivation properties provided by hydrogenated silicon nitride (SiNx:H) layers deposited in a lab‐scale atmospheric pressure plasma enhanced chemical vapor deposition (AP‐PECVD) reactor. By applying modulated low‐frequency plasma (200 kHz), homogeneous SiNx:H layers, with small variances in thickness w and refractive index n (Δw ≤ 2 nm; Δn ≤ 0.02), were achieved on a surface area of 45 × 55 mm2. The use of voltage amplitude modulation enabled discharge optimization and led to greatly enhanced SiNx:H film homogeneity and conformity in comparison with continuous plasma discharge conditions. Additionally, AP‐PECVD SiNx:H showed good thermal stability (Δw ≤ 1 nm; Δn ≤ −0.02) with low absorption coefficients (k ≤ 0.1 at 275 nm), demonstrating that such layers could act as efficient antireflective coatings. Furthermore, outstanding surface passivation properties were achieved after firing, both on n‐type FZ c‐Si substrates of standard 2.8 Ω.cm doping (τeff = 1.45 ms) and on highly doped 85 Ω/sq n+ emitters (j0e = 74 ± 2 fA.cm−2). Finally, AP‐PECVD SiNx:H thin films were tested on industrial passivated emitter and rear solar cell (PERC) architectures, where the potential of applying these layers both as efficient rear‐side capping layer and front‐side antireflective coating was demonstrated. The first lab‐scale 40 × 40 mm2 PERC solar cells featuring AP‐PECVD SiNx:H layers led to conversion efficiencies of up to 20.6%. These results pave the way for upscaling the dielectric barrier discharge lab‐scale reactor in an industrial in‐line process, which could provide low‐cost and high‐throughput SiNx:H capping and antireflective layers.

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Section: Introductionmentioning

confidence: 99%

Efficient silicon nitride SiN_x:H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells

Lelièvre

Kafle

Saint‐Cast

et al. 2019

Progress in Photovoltaics

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“…. In this case, it is worth stressing that the field‐effect passivation of the thermal grown SiO 2 is very weak so that the B‐emitter passivation is mainly determined by the chemical passivation of SiO 2 /p + ‐Si interface . Within the emitter‐parameter ranges of this study, the PC1D simulation error of S n resulting from the error of the input COCOS measured Q f is in the range 0.5–1.1%.…”

Section: Resultsmentioning

confidence: 83%

Boron Implanted Junction with In Situ Oxide Passivation and Application to p‐PERT Bifacial Silicon Solar Cell

Huang

Wang

Mandrell

et al. 2019

Physica Status Solidi (a)

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Boron junction and its passivation is an active topic in photovoltaic research due to its importance to passivated emitter and rear totally-diffused (PERT) bifacial Si solar cell. In this paper, a systematic study on boron-implanted junction, its passivation and ohmic contact formation, as well as application to p-PERT bifacial cells has been presented. More specifically, the impact of junction profile and surface passivation on boron junction quality, which can be influenced by implantation and in situ oxidation anneal parameters is studied. Good-quality boron emitter and metal/p þ -Si ohmic contact are achieved, as demonstrated by emitter saturation current of 5-30 fA cm À2 and specific contact resistance of 3-6 mΩ cm À1 . A roadmap for a p-PERT bifacial cell using fully ion implanted (boron and phosphorus) technology, based on which p-PERT bifacial cells demonstrats front side efficiency of 20.6% (open circuit voltage of 658 mV), rear side efficiency of %17% and bifaciality factor of 0.82-0.87 is also presented. Effective cell efficiency of %22% is achieved with a Halm IV-tester with white transporting belts that enhance reflection about 10% from the cell rear.

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“…8 In fact, the well-used Al 2 O 3 /SiN x stacked front passivation films have an excellent passivation effect on the silicon surface. 9 But it is not suitable for the front n + emitter of p-type silicon solar cells because of the inversion layer's lifetime reduction. 10 Another candidate for passivation of dielectric films on silicon surfaces is SiO 2 /SiN x stack layer.…”

Section: Introductionmentioning

confidence: 99%

Improved Al₂O₃/SiN_x and SiO₂/SiN_x stack passivation layer structure PERC sc‐silicon solar cells on mass production line

Liu

Wang²,

Dong

et al. 2020

Intl J of Energy Research

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In this study, we have successfully developed an industrially feasible stack rear Al 2 O 3 /SiN x and front SiO 2 /SiN x passivation layer PERC solar cells fabrication method based on the existing PERC sc-silicon solar cells production line. The manufacturing parameters of the deposition processes were adapted to get the best passivation effect. The front SiO 2 /SiN x passivation layer deposition parameters were researched for the best front passivation effect. The fabrication parameters of the first high refractive index SiN x layer were improved. And a new thin low refractive index SiN x capping layer at SiO 2 /SiN x interface was introduced. Meanwhile, the stack rear Al 2 O 3 /SiN x layer structure with double SiN x layers was also researched, which exhibited good passivation results for the rich hydrogen content in high refractive index SiN x layer. The industrial stack passivation layers PERCs with new thin low refractive index SiN x capping layer possess good performances with an efficiency of 22.15%.

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Effective passivation of p+ and n+ emitters using SiO2/Al2O3/SiNx stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells

Abstract: Data of ALD Al2O3 rear surface passivation, Al2O3 PERC cell performance, and cell efficiency loss mechanisms of Al2O3 PERC cell, Data in Brief. 11 (2017) 19-26.

Cited by 40 publications

References 170 publications

Efficient silicon nitride SiN_x:H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells

Efficient silicon nitride SiN_x:H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells

Boron Implanted Junction with In Situ Oxide Passivation and Application to p‐PERT Bifacial Silicon Solar Cell

Improved Al₂O₃/SiN_x and SiO₂/SiN_x stack passivation layer structure PERC sc‐silicon solar cells on mass production line

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Effective passivation of p+ and n+ emitters using SiO2/Al2O3/SiNx stacks: Surface passivation mechanisms and application to industrial p-PERT bifacial Si solar cells

Abstract: Data of ALD Al2O3 rear surface passivation, Al2O3 PERC cell performance, and cell efficiency loss mechanisms of Al2O3 PERC cell, Data in Brief. 11 (2017) 19-26.

Cited by 40 publications

References 170 publications

Efficient silicon nitride SiNx:H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells

Efficient silicon nitride SiNx:H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells

Boron Implanted Junction with In Situ Oxide Passivation and Application to p‐PERT Bifacial Silicon Solar Cell

Improved Al2O3/SiNx and SiO2/SiNx stack passivation layer structure PERC sc‐silicon solar cells on mass production line

Contact Info

Product

Resources

About

Efficient silicon nitride SiN_x:H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells

Efficient silicon nitride SiN_x:H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells

Improved Al₂O₃/SiN_x and SiO₂/SiN_x stack passivation layer structure PERC sc‐silicon solar cells on mass production line