Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs

Liu, Shih-Chien; Huang, Chung-Kai; Chang, Chung-Yi; Lin, Yueh Chin; Chen, Bo‐Yuan; Tsai, Sheng‐Han; Majlis, Burhanuddin Yeop; Dee, Chang Fu; Chang, Edward Yi

doi:10.1109/jeds.2017.2669100

Cited by 15 publications

(11 citation statements)

References 14 publications

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“…This positive interface charge between a dielectric layer (Al 2 O 3 , SiON, SiN x ) and an III-nitride material has been widely reported in the literature [29,30,31,32,33]. Different dielectric layer materials used as a passivation layer induce various positive interface charge densities [32,33]. For example, the SiON has a higher fixed charge density of 1.3×10 13 cm −2 [34] than a pure SiN or SiO 2 density of 1×10 11 cm −2 [35] owing to the increase of Si dangling bonds at the interface which act as ionized donors [33].…”

Section: Simulation Methodsmentioning

confidence: 56%

Section: Simulation Methodsmentioning

confidence: 68%

“…Different dielectric layer materials used as a passivation layer induce various positive interface charge densities [32,33]. For example, the SiON has a higher fixed charge density of 1.3×10 13 cm −2 [34] than a pure SiN or SiO 2 density of 1×10 11 cm −2 [35] owing to the increase of Si dangling bonds at the interface which act as ionized donors [33]. These ionized donors incompletely neutralize the negative polarization charge at a barrier surface [27].…”

Section: Simulation Methodsmentioning

confidence: 99%

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The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation

Ahmeda

Ubochi

Alqaysi

et al. 2020

Microelectronics Reliability

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Section: Simulation Methodsmentioning

confidence: 56%

Section: Simulation Methodsmentioning

confidence: 68%

Section: Simulation Methodsmentioning

confidence: 99%

See 1 more Smart Citation

The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation

Ahmeda

Ubochi

Alqaysi

et al. 2020

Microelectronics Reliability

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“…Trapping effects at the surface states are responsible for the current collapse phenomenon of AlGaN/GaN HEMTs. In order to suppress the electron trapping effects, the passivation film must have positive charges to attract the trapped electrons [23][24][25][26][27]. The net charges of the SiN x film can be modified under the deposition conditions that alter the stoichiometry of SiN x .…”

Section: Resultsmentioning

confidence: 99%

Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs

et al. 2020

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We optimized a silicon nitride (SiNx) passivation process using a catalytic-chemical vapor deposition (Cat-CVD) system to suppress the current collapse phenomenon of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs). The optimized Cat-CVD SiNx film exhibited a high film density of 2.7 g/cm3 with a low wet etch rate (buffered oxide etchant (BOE) 10:1) of 2 nm/min and a breakdown field of 8.2 MV/cm. The AlGaN/GaN-on-Si HEMT fabricated by the optimized Cat-CVD SiNx passivation process, which had a gate length of 1.5 μm and a source-to-drain distance of 6 μm, exhibited the maximum drain current density of 670 mA/mm and the maximum transconductance of 162 mS/mm with negligible hysteresis. We found that the optimized SiNx film had positive charges, which were responsible for suppressing the current collapse phenomenon.

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“…This may be attributed to the fixed charge in the dielectric/AlGaN interface. Some researches show that a large amount of fixed charges exist in the dielectric layer and dielectric/AlGaN interface [31][32][33][34][35], differing from interface traps analyzed in the work, these kinds of fixed charges are not modulated by the gate voltage and do not lead to voltage hysteresis. Therefore, they have a negligible effect on the CV hysteresis measurement.…”

Section: Resultsmentioning

confidence: 99%

AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

et al. 2018

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Three different insulator layers SiNx, SiON, and SiO2 were used as a gate dielectric and passivation layer in AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMT). The SiNx, SiON, and SiO2 were deposited by a plasma-enhanced chemical vapor deposition (PECVD) system. Great differences in the gate leakage current, breakdown voltage, interface traps, and current collapse were observed. The SiON MIS-HEMT exhibited the highest breakdown voltage and Ion/Ioff ratio. The SiNx MIS-HEMT performed well in current collapse but exhibited the highest gate leakage current density. The SiO2 MIS-HEMT possessed the lowest gate leakage current density but suffered from the early breakdown of the metal–insulator–semiconductor (MIS) diode. As for interface traps, the SiNx MIS-HEMT has the largest shallow trap density and the lowest deep trap density. The SiO2 MIS-HEMT has the largest deep trap density. The factors causing current collapse were confirmed by Photoluminescence (PL) spectra. Based on the direct current (DC) characteristics, SiNx and SiON both have advantages and disadvantages.

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Effective Passivation With High-Density Positive Fixed Charges for GaN MIS-HEMTs

Cited by 15 publications

References 14 publications

The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation

The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation

Development of Catalytic-CVD SiNx Passivation Process for AlGaN/GaN-on-Si HEMTs

AlGaN/GaN MIS-HEMT with PECVD SiNx, SiON, SiO2 as Gate Dielectric and Passivation Layer

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