Effectiveness of a SiC schottky diode for Super-Junction MOSFETs on continuous conduction mode PFC

Choi, Wonsuk; Young, Sungmo

doi:10.1109/speedam.2010.5542022

Cited by 7 publications

(3 citation statements)

References 3 publications

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“…To the best of our knowledge, this is the highest efficiency reported for E-mode GaN DHFETs on Si substrates at these high switching frequencies. It clearly shows the high potential of GaN-on-Si devices for high-frequency power switching applications compared with commercial Sibased MOSFET devices [15], [16].…”

Section: Converter Resultsmentioning

confidence: 91%

A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si

Das

Everts

Keybus

et al. 2011

IEEE Electron Device Lett.

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III-Nitride materials are very promising to be used in next-generation high-frequency power switching applications. In this letter, we demonstrate the performance of normally off AlGaN/GaN/AlGaN double-heterostructure FETs (DHFETs) using a boost-converter circuit. The figures of merit of our large (57.6-mm gate width) GaN transistor are presented: R ON * Q G of 2.5 Ω • nC is obtained at V DS = 140 V. The switching performance of the GaN DHFET is studied in a dedicated high-frequency boost converter: both the switching times and power losses are characterized. We show converter efficiency values up to 96.1% at 500 kHz and 93.9% at 850 kHz at output power of 100 W.

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Section: Converter Resultsmentioning

confidence: 91%

A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si

Das

Everts

Keybus

et al. 2011

IEEE Electron Device Lett.

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“…For SiC based diode, frequency variation has negligible influences on this curve while the curve by Si based diode is greatly deviated from the nominal one. In [13][14][15], experiments verify that energy curves of C j with respect to voltage level is irrelevant to temperature in the industrial application temperature range. From the literatures above, the voltage-varying curves of C j and C oss are insensitive to circuit states, such as temperature, switching frequency, etc.…”

Section: Introductionmentioning

confidence: 86%

Extended Off-Time Control for CRM Boost Converter Based on Piecewise Equivalent Capacitance Model

et al. 2020

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Valley-switching (VS) and zero-voltage switching (ZVS) improves overall efficiency in critical conduction mode (CRM) boost converters. To achieve VS/ZVS, off-time of the main switch is often extended to match the resonance period by circuit inductor and parasitic capacitors of switching components. In this paper, a piecewise equivalent model for parasitic capacitors is proposed to derive analytical solutions of the resonant process, by which the numerical solutions of VS/ZVS time is calculated. To precisely achieve VS/ZVS in a boost converter, corresponding extended off-time based on the numerical solutions is implemented with an extended off-time (EOT) controller. The EOT controller makes the inductor volt-second unbalance in continuous conduction mode (CCM) operation during one switching cycle, leading to the convergence to CRM operation. The analytical and experimental results correct the results derived by conventional equivalent model for parasitic capacitors, which leads to deviated VS/ZVS boundary and wrongly calculated off-time. The proposed model and controller are verified in a nonsynchronous CRM boost converter based on GaN high electron mobility transistor (HEMT) and SiC diode. With the derived extended off-time, a peak efficiency of 99.15% is achieved at output power level of 200W. INDEX TERMS Critical conduction mode, parasitic capacitance, piecewise equivalent capacitance model, extended off-time control, boost converter.

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“…Vertical SJ MOSFETs based on charge balance have set a new benchmark for high voltage Si devices, enabling a reduction of the on resistance and parasitic capacitances [4]. These switches are characterized by very low and highly nonlinear drain to source and drain to gate capacitances.…”

Section: Superjunction Si Mosfetsmentioning

confidence: 99%

Ultrafast switching superjunction MOSFETs for single phase PFC applications

Hernández

Petersen

Andersen

et al. 2014

2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014

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Abstract-This paper presents a guide on characterizing stateof-the-art silicon superjunction (SJ) devices in the 600V range for single phase power factor correction (PFC) applications. The characterization procedure is based on a minimally inductive double pulse tester (DPT) with a very low intrusive current measurement method, which enables reaching the switching speed limits of these devices. Due to the intrinsic low and nonlinear capacitances in vertical SJ MOSFETs, special attention needs to be paid to the gate drive design to minimize oscillations and limit the maximum at turn off. This paper investigates the latest SJ devices in order to set a reference for future research on improvement over silicon (Si) attained with the introduction of wide bandgap devices in single phase PFC applications. The obtained results show that the latest generation of SJ devices set a new benchmark for its wide bandgap competitors.

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Effectiveness of a SiC schottky diode for Super-Junction MOSFETs on continuous conduction mode PFC

Cited by 7 publications

References 3 publications

A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si

A 96% Efficient High-Frequency DC–DC Converter Using E-Mode GaN DHFETs on Si

Extended Off-Time Control for CRM Boost Converter Based on Piecewise Equivalent Capacitance Model

Ultrafast switching superjunction MOSFETs for single phase PFC applications

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