Effects of (0.01Ni-PVA) interlayer, interface traps (Dit), and series resistance (Rs) on the conduction mechanisms(CMs) in the Au/n-Si (MS) structures at room temperature

Abstract

In order to determine effects of interlayer, D it , and R s on the CMs, both Au/n-Si and Au/(0.01Ni-PVA)/n-Si (MPS) structures were fabricated on the n-Si wafer and their electrical parameters were extracted from the current-voltage (I-V) and capacitance-voltage (C-V) measurements. The ideality factor (n), zero-bias barrier height (Φ Bo), rectifying rate (RR at ±5V), R s , shunt resistances (R sh), and density of D it (at 0.40eV) values were found from the I-V data as 1.944, 0.733 eV, 3.50×10 3 , 64.8 , 0.23 M, 1.62x10 13 eV-1 cm-2 for MS and 1.533, 0.818 eV, 1.15×10 7 , 5.0 , 57.5 M, 8.82x10 12 eV-1 cm-2 for MPS. Fermi energy (E F), barrier height (Φ B (C-V)), depletion-layer width (W D) values were obtained from the C-V data as 0.239 eV, 0.812 eV, 1.14x10-4 cm for MS and 0.233 eV, 0.888 eV, 9.31x10-5 cm for MPS. These results indicated that the MPS structure has lower R s , D it , leakage current and higher RR, R sh , BH compared with MS and so this interlayer can be successfully used instead of conventional insulator interlayer. The Ln(I)-Ln(V) plot at forward-bias region has three linear parts corresponding to the low, intermediate, and higher voltages. In these regions; conduction mechanism (CM) is governed by ohmic, trap charge-limited current (TCLC) and space charge-limited current (SCLC), respectively.

A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (Nss) and series resistance (Rs) effects

“…As can be seen in table 2, barrier height is higher for MPS type SDs due to the NG:PVP interface layer. Similar results are also reported in the literature in very recently for MS and MPS type SDs [46][47][48].…”

Voltage Dependent Profiles of the Surface States and Series Resistance (Rs) in the Al-(Cd:ZnO)-pSi Schottky Diodes (SDs) Utilizing Voltage-Current (IV) Characteristics

“…Therefore, such materials can be used in different application areas, such as sensors, photo-transistors/diode/detectors, LEDs, and solar-cells [4]. The ZnO is used as potential TCOs in optoelectronics applications as an interlayer to insulate and react between metal and semiconductor, and it has a direct wide bandgap (3.37eV) and high binding energy (60meV) [5].…”