Effects of 2 MeV Ge+ irradiation on AlGaN/GaN high electron mobility transistors

Douglas, Erica Ann; Bielejec, Edward S.; Frenzer, Patrick; Yates, B. R.; Pearton, S. J.; Lo, Chien-Fong; Liu, Lu; Kang, Tsung-Sheng; Ren, F.

doi:10.1116/1.4792370

Cited by 10 publications

(5 citation statements)

References 27 publications

(35 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Proton damage.-A wide range of studies have been performed on proton damaged HEMTs in different proton energy regimes. 5,12,16,[21][22][23][24][25][27][28][29][30][31][32][33][34][35][36][37][42][43][44][45][46][47][49][50][51][52][53][54][55][56][57][58]79 For the high energy protons encountered in space-based applications, AlGaN/GaN HEMTs show decreases in tranconductance (g m ), drain-source current (I DS ), shifts in threshold voltage (V T ) and gate current (I G ) after irradiation with 40 MeV protons at doses equivalent to decades in low-earth orbit. These protons create deep electron traps that increase the HEMT channel resistance and decrease carrier mobility.…”

Section: Changes In Gan-based Hemt Performance After Irradiationmentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

285

130

View full text Add to dashboard Cite

Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

show abstract

Section: Changes In Gan-based Hemt Performance After Irradiationmentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

285

130

View full text Add to dashboard Cite

show abstract

“…It is well-known that space equipments mostly operate at the van Allen radiation belt, which mainly include protons and electrons [11,12]. When semiconductor devices work in this environment, the radiation resistance of semiconductor devices must be established, due to the fact that performances of device will become deteriorated with irradiation time and dose [13,14]. Once the space radiation fluence reaches a certain value, the device will stop working, and leads to a failure the space equipment.…”

Section: Introductionmentioning

confidence: 99%

Untitled

2021

JOR

View full text Add to dashboard Cite

In this paper, the influence of electron irradiation on DC and RF characteristics of InP-based HEMTs with different gate widths were studied by irradiation experiment. The results show that the value of channel current (I DS ) and transconductance (g m ) are decreased for device with different gate width after electron irradiation, which is mainly due to the reduction of mobility in the channel by the irradiation-induced defects. However, the carrier concentration in the channel has a little change. Compared with the device with 100 μm gate width, I DS and g m of the device with 40 μm gate width were decreased by 1.5% and 3%.Meanwhile, the forward gate current decreased due to the increase of series resistance of gate contact caused by electron irradiation. The interface defects induced by electron irradiation induced the increase of the reverse gate current. Additionally, the current gain cut-off frequency (f T ) and maximum oscillation frequency (f max ) were reduced by 19.8% and 10.9% for device with 40 μm gate width, and the f T and f max were only reduced by 7.1% and 8.2% for device with 100 μm gate width. The experimental results indicate that designing a reasonable structure is an effective method to enhance the radiation resistance in InP-based HEMTs, and this method can also be utilized in other semiconductor devices.

show abstract

“…[9] In harsh space environment, various high-energy particles and rays will inevitably lead to performance deterioration of devices and even abnormality of electronic systems. [10,11] Especially, proton is one of the main particles in space irradiation environment. Considering mature high technology, low manufacturing cost, and broad usage, researches about proton irra-diation effect and hardness techniques are mainly concentrated on Si-based complementary metal-oxide-semiconductor transistor (CMOS) and silicon on insulator (SOI) devices.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane*

et al. 2020

View full text Add to dashboard Cite

An anti-radiation structure of InP-based high electron mobility transistor (HEMT) has been proposed and optimized with double Si-doped planes. The additional Si-doped plane under channel layer has made a huge promotion in channel current, transconductance, current gain cut-off frequency, and maximum oscillation frequency of InP-based HEMTs. Moreover, direct current (DC) and radio frequency (RF) characteristic properties and their reduction rates have been compared in detail between single Si-doped and double Si-doped structures after 75-keV proton irradiation with dose of 5 × 1011 cm−2, 1 × 1012 cm−2, and 5 × 1012 cm−2. DC and RF characteristics for both structures are observed to decrease gradually as irradiation dose rises, which particularly show a drastic drop at dose of 5 × 1012 cm−2. Besides, characteristic degradation degree of the double Si-doped structure is significantly lower than that of the single Si-doped structure, especially at large proton irradiation dose. The enhancement of proton radiation tolerance by the insertion of another Si-doped plane could be accounted for the tremendously increased native carriers, which are bound to weaken substantially the carrier removal effect by irradiation-induced defects.

show abstract

Effects of 2 MeV Ge+ irradiation on AlGaN/GaN high electron mobility transistors

Cited by 10 publications

References 27 publications

Review—Ionizing Radiation Damage Effects on GaN Devices

Review—Ionizing Radiation Damage Effects on GaN Devices

Untitled

Enhancement of radiation hardness of InP-based HEMT with double Si-doped plane*

Contact Info

Product

Resources

About