Effects of 340 keV proton irradiation on InGaN/GaN blue light-emitting diodes

Kim, Byung Jae; Hwang, Ya Hsi; Ahn, Shihyun; Ren, F.; Pearton, S. J.; Kim, Ji Hyun; Jang, Tae Sung

doi:10.1116/1.4930297

Cited by 14 publications

(15 citation statements)

References 17 publications

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“…One of the best ways to controllably alter the deep trap concentration and to assess the impact of various centers on performance of semiconductor devices is to study the influence of bombardment with high energy particles on device performance. Though radiation effects in LEDs have been studied in a number of publications , no detailed studies on deep trap spectra in NUV LEDs have been published. In this letter, we present results of a study on the influence of 6 MeV electron irradiation on NUV LEDs.…”

Section: Introductionmentioning

confidence: 99%

Electron irradiation of near‐UV GaN/InGaN light emitting diodes

Lee

Polyakov

Smirnov

et al. 2017

Physica Status Solidi (a)

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Irradiation with 6 MeV electrons of near-UV (peak wavelength 385-390 nm) multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) causes an increase in density of deep electron traps near E c À0.8 and E c À1 eV, and correlates to a 90% decrease of electroluminescence (EL) efficiency after a fluence of 1.1 Â 10 16 cm À2 . The likely origin of the EL efficiency decrease is this increase in concentration of the E c À0.8 eV and E c À1 eV traps.

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Section: Introductionmentioning

confidence: 99%

Electron irradiation of near‐UV GaN/InGaN light emitting diodes

Lee

Polyakov

Smirnov

et al. 2017

Physica Status Solidi (a)

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“…The effects of proton irradiation on the optical and electrical performance of InGaN/GaN blue light-emitting diodes (LEDs) irradiated with protons at a fixed energy of 340 keV and doses ranging from 5 × 10 10 to 1 × 10 14 /cm 2 were also investigated. 170 The forward operating voltages at an injection current of 100 mA before and after proton irradiation with doses from 5 × 10 10 to 5 × 10 11 /cm 2 were almost the same, around 4.4 V. However, the forward operating voltages at an injection current of 100 mA after higher doses of 10 12 , 5 × 10 12 , 10 13 and 10 14 /cm 2 were progressively higher, with values of 4.37, 4.39, 4.5 and 8.11 V, respectively. The light output at an injection current of 100 mA after low dose proton irradiations from 5 × 10 10 to 5 × 10 11 /cm 2 slightly decreased by 2∼4%, compared with the unirradiated reference LEDs.…”

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

“…[158][159][160][161][162][163][164][165][166][167][168][169][170][171] Recently, the application of GaN-based LEDs has been extended to satellite communication systems for weather forecasting or broadband data transmission due to their high radiation hardness. The materials used in GaN-based LEDs have small lattice constants (a = 3.189 Å, c = 5.186 Å for wurtzite GaN structure) due to their strong bond energies and therefore show superior resistance to damage under radiation environments due to the higher displacement energies compared with other semiconductor systems such as the GaAs used in red LEDs (a = 5.653 Å).…”

Section: Radiation Damage In Ingan/gan Light Emitting Diodesmentioning

confidence: 99%

Review—Ionizing Radiation Damage Effects on GaN Devices

Pearton

Ren

Patrick

et al. 2015

ECS J. Solid State Sci. Technol.

285

130

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Gallium Nitride based high electron mobility transistors (HEMTs) are attractive for use in high power and high frequency applications, with higher breakdown voltages and two dimensional electron gas (2DEG) density compared to their GaAs counterparts. Specific applications for nitride HEMTs include air, land and satellite based communications and phased array radar. Highly efficient GaNbased blue light emitting diodes (LEDs) employ AlGaN and InGaN alloys with different compositions integrated into heterojunctions and quantum wells. The realization of these blue LEDs has led to white light sources, in which a blue LED is used to excite a phosphor material; light is then emitted in the yellow spectral range, which, combined with the blue light, appears as white. Alternatively, multiple LEDs of red, green and blue can be used together. Both of these technologies are used in high-efficiency white electroluminescent light sources. These light sources are efficient and long-lived and are therefore replacing incandescent and fluorescent lamps for general lighting purposes. Since lighting represents 20-30% of electrical energy consumption, and because GaN white light LEDs require ten times less energy than ordinary light bulbs, the use of efficient blue LEDs leads to significant energy savings. GaN-based devices are more radiation hard than their Si and GaAs counterparts due to the high bond strength in III-nitride materials. The response of GaN to radiation damage is a function of radiation type, dose and energy, as well as the carrier density, impurity content and dislocation density in the GaN. The latter can act as sinks for created defects and parameters such as the carrier removal rate due to trapping of carriers into radiation-induced defects depends on the crystal growth method used to grow the GaN layers. The growth method has a clear effect on radiation response beyond the carrier type and radiation source. We review data on the radiation resistance of AlGaN/GaN and InAlN/GaN HEMTs and GaN-based LEDs to different types of ionizing radiation, and discuss ion stopping mechanisms. The primary energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects in GaN are discussed. The carrier removal rates are a function of initial carrier concentration and dose but not of dose rate or hydrogen concentration in the nitride material grown by Metal Organic Chemical Vapor Deposition. Proton and electron irradiation damage in HEMTs creates positive threshold voltage shifts due to a decrease in the two dimensional electron gas concentration resulting from electron trapping at defect sites, as well as a decrease in carrier mobility and degradation of drain current and transconductance. State-of-art simulators now provide accurate predictions for the observed changes in radiation-damaged HEMT performance. Neutron irradiation creates more extended damage regions and at high doses leads to Fermi level pinning while 60 Co γ-ray irradiation leads to much smaller changes in HEMT drain ...

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“…From [41], it is also seen that GaN Quantum well (QW) structures degrade in optical performance two orders of magnitude after GaAs LEDs. The results presented in [42] [43] Neutron Damage -Similar effects have been seen with neutron irradiation in LEDs. Results in [44] show that neutron irradiation results in a carrier removal effect within the lattic.…”

Section: Radiation Damage In Gan Ledssupporting

confidence: 63%

A Low-Power Optoelectronic Characterizer for CubeSat: LOCC and III-V Nitride Based LEDs

Pachol¹

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A Low-Powered Optoelectronic Characterizer for CubeSat: LOCC and III-V Nitride Based LEDs Matthew J. Pachol III-V semiconductor materials exhibit robustness and natural hardness when exposed to ionizing radiation and temperature swings. With these characteristics in mind, III-V Nitride Light Emitting Diodes (LEDs) are ideal devices for space-based applications and missions. The effects of ionizing radiation on optoelectronic devices comprised of III-V materials have been studied, but results have been obtained through experiments performed in terrestrial laboratories. While these laboratory tests may lend insight into device lifetimes, performance degradation, etc., they are no substitute for similar measurements and characterization performed in space. Interest in small satellite applications have grown over the past decade. These solutions range from Earth imaging to communication networks. Small satellites provide a unique opportunity to gain an understanding of the reliability and operational characteristics of III-V based materials and other semiconductor devices while exposed to the environment of space. To meet the constraints of the small satellite, a Low-powered Optoelectronic Characterizer for CubeSat (LOCC) has been developed in PC/104 form, measuring 3.6 by 3.8 inches. LOCC performs current-voltage and electroluminescent measurements of LEDs while in space. The LOCC system is designed using low-power integrated circuits that can supply over 100 mA of current to LEDs while maintaining low power of 3.2W under operation. This thesis presents the design, implementation, and control of the LOCC system. This includes system block diagrams, printed circuit board layouts, interfacing, firmware, and software. Additionally, the resulting current-voltage measurements, required wattage, and required data storage are presented to illustrate functionality. This instrumentation enables the study of optoelectronic devices in space, allowing future research to focus on producing radiation hard light emitting devices that can operate in environments with reduced shielding against ionizing radiation while maintaining device reliability.

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Effects of 340 keV proton irradiation on InGaN/GaN blue light-emitting diodes

Cited by 14 publications

References 17 publications

Electron irradiation of near‐UV GaN/InGaN light emitting diodes

Electron irradiation of near‐UV GaN/InGaN light emitting diodes

Review—Ionizing Radiation Damage Effects on GaN Devices

A Low-Power Optoelectronic Characterizer for CubeSat: LOCC and III-V Nitride Based LEDs

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