2017
DOI: 10.1116/1.4974220
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Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric

Abstract: Transition metal dichalcogenides (TMDs) have attracted intensive attention due to their atomic layer-by-layer structure and moderate energy bandgap. However, top-gated transistors were only reported in a limited number of research works, especially transistors with a high-k gate dielectric that are thinner than 10 nm because high-k dielectrics are difficult to deposit on the inert surface of the sulfide-based TMDs. In this work, the authors fabricated and characterized top-gated, few-layer MoS2 transistors wit… Show more

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Cited by 36 publications
(50 citation statements)
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“…as well as nanometer scalability (to reduce their effective oxide thickness "EOT" for enhanced gate control over the MoS 2 channel). The interested reader is directed to various literature reports for further reading on these topics [317][318][319][320][321][322][323][324][325][326][327][328][329][330][331][332][333]. The focus of the following discussion is on the influence of dielectric engineering on important device parameters, such as doping, carrier mobility, ON-currents and contact resistance, and how dielectric engineering can be used to help enhance the performance of MoS 2 -based devices.…”
Section: Role Of Dielectrics In Doping and Mobility Engineeringmentioning
confidence: 99%
“…as well as nanometer scalability (to reduce their effective oxide thickness "EOT" for enhanced gate control over the MoS 2 channel). The interested reader is directed to various literature reports for further reading on these topics [317][318][319][320][321][322][323][324][325][326][327][328][329][330][331][332][333]. The focus of the following discussion is on the influence of dielectric engineering on important device parameters, such as doping, carrier mobility, ON-currents and contact resistance, and how dielectric engineering can be used to help enhance the performance of MoS 2 -based devices.…”
Section: Role Of Dielectrics In Doping and Mobility Engineeringmentioning
confidence: 99%
“…Notably, a negative shift in VT of the control set is consistent with previous observations of MoS2 FETs after top-gate oxide deposition. 48 (Table 1), indicating the presence of substantial positive contamination that dopes the channel. The preceding results allowed us to estimate Qi for both the EM-FGA and the control FETs.…”
Section: Back-gate Performancementioning
confidence: 99%
“…However, their use with monolayers has thus far been avoided because of the risk of destroying the material or generating insulating molybdenum oxide (MoOx). Similarly, forming gas annealing (FGA) has been applied to MoS2 FETs to improve metal-MoS2 contact resistance and also remove organic contamination, 48,53 but such anneals are usually performed at temperatures between 200°C and 300°C, for short durations (2 -4 hours), and after the deposition of a top-gate oxide to minimize the risk of material damage and mitigate the creation of sulfur vacancies. [53][54] Forming gas annealing for longer temperature and durations on exposed MoS2 is thought to damage or destroy the material, 54 but we demonstrate it does not.…”
Section: Introductionmentioning
confidence: 99%
“…However, the zero bandgap of graphene obstructs its application for semiconductors in electronic and optoelectronic operation [ 2 , 3 ]. Therefore, transition metal dichalcogenides (TMDs) have aroused significant interest due to their appropriate band gap for applications such as field-effect transistors (FETs) [ 4 , 5 , 6 , 7 ], logic circuits [ 8 , 9 , 10 , 11 ], junctions [ 12 , 13 , 14 , 15 ], photodetectors [ 16 , 17 , 18 ], memory devices [ 19 , 20 , 21 ], flexible devices [ 22 , 23 ], and sensors [ 24 , 25 ]. The TMDs consist of one transition metal and two chalcogenides formed into a sandwich structure monolayer.…”
Section: Introductionmentioning
confidence: 99%