Effects of As Doping on Properties of ZnO Films

Abstract

A series of ZnO thin films with various deposition temperatures were prepared on (100) GaAs substrates by radio-frequency magnetron sputtering using ZnO target. The ZnO films were studied by field emission scanning electron microscope(FESEM), x-ray diffraction(XRD), photoluminescence(PL), cathodoluminescence(CL), and Hall measurements. The structural, optical, and electrical properties of the films were discussed as a function of the deposition temperature. With increasing temperature, the compressive stress in the films was released and their crystalline and optical properties were improved. From the depth profile of As measured by secondary ion mass spectrometry(SIMS), As doping was confirmed, and, in order to activate As dopant atoms, post-annealing treatment was performed. After annealing treatment, electrical and optical properties of the films were changed.

Dual codoping for the fabrication of low resistive p-ZnO

“…The substrate temperature, 450 • C has been used to avoid the incorporation of Ga atoms into ZnO as the vapour pressure of Ga is much lower than that of As below 500 • C [14]. The electrical properties of the films have been studied by Hall measurements in Van der Pauw configuration (HMS 3000) at room temperature.…”