Fabrication of tridoped p-ZnO thin film and homojunction by RF magnetron sputtering

Balakrishnan, L.; Gowrishankar, S.; Gopalakrishnan, N.

doi:10.1016/j.ceramint.2012.04.075

Cited by 6 publications

(4 citation statements)

References 31 publications

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“…The reason for choosing Al as donor and, As and N as acceptors together with the complete growth process of AlAs codoped and AlAsN tridoped ZnO thin films can be found elsewhere. 13,14 The ZnO homojunctions have been fabricated by growing 2 at% Al doped n-ZnO thin film on best AlAs codoped and AlAsN tridoped p-ZnO thin films which have been grown on semi-insulating GaAs (100) substrate. 13,14 The electrical contacts to both p-and n-type ZnO z E-mail: bslv85@gmail.com thin films have been given through Al electrodes, grown by thermal evaporation.…”

Section: Methodsmentioning

confidence: 99%

“…13,14 The ZnO homojunctions have been fabricated by growing 2 at% Al doped n-ZnO thin film on best AlAs codoped and AlAsN tridoped p-ZnO thin films which have been grown on semi-insulating GaAs (100) substrate. 13,14 The electrical contacts to both p-and n-type ZnO z E-mail: bslv85@gmail.com thin films have been given through Al electrodes, grown by thermal evaporation. Ohmic contacts have been achieved by rapid thermal annealing at 200 • C for 5 min, and the low annealing temperature is to avoid further diffusion of As atoms.…”

Section: Methodsmentioning

confidence: 99%

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A Comparative Study on p-ZnO:AlAs/n-ZnO:Al and p-ZnO:AlAsN/n-ZnO:Al Bilayer Homojunction Diodes Performance

Balakrishnan¹,

Gowrishankar²,

Gopalakrishnan³

2014

ECS Solid State Letters

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An attempt has been made to study the performance comparison of homojunctions fabricated using AlAs codoped and AlAsN tridoped low resistive and stable p-ZnO thin films for optoelectronics devices (light emitting diodes and optic sensors) application. The Al monodoped ZnO film has been used as n-layer. X-ray diffraction and time of flight-secondary ion mass spectrometry confirms the formation of good structural quality bilayer homojunction. The junction parameters have been determined using I-V characteristics of the junction by Cheung's and Norde's methods. It has been found that, the homojunction fabricated using tridoped ZnO film showed better performance in comparison with codoped film.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

A Comparative Study on p-ZnO:AlAs/n-ZnO:Al and p-ZnO:AlAsN/n-ZnO:Al Bilayer Homojunction Diodes Performance

Balakrishnan¹,

Gowrishankar²,

Gopalakrishnan³

2014

ECS Solid State Letters

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“…Among all these methods, reactive magnetron sputtering has been most widely used as depositing the film because of its advantages of large scale production, high maneuverability and stoichiometry controllability. So many researches have been carried out on the dependence of film properties on sputtering parameters [13][14][15]. In this study, we prepared a series of ZnO films by radio frequency (RF) magnetron sputtering at different substrate temperature, and discussed the influences of substrate temperature on the structure of ZnO films.…”

Section: Introductionmentioning

confidence: 99%

The Preparation of the Highly Preferred Orientation of Wurtzite Structure Zinc Oxide Films

Lan

Zhou

et al. 2014

AMR

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Zinc oxide (ZnO) films are prepared on n-Si substrates by means of radio frequency (RF) magnetron sputtering method. The influences of substrate temperature on the crystal orientation and crystalline structure of ZnO films are investigated by X-ray diffraction (XRD) and Raman spectroscopy. The surface morphologies are studied by scanning electron microscope (SEM). It is indicated that ZnO films with wurtzite structure were successfully prepared. When the substrate temperature reduced to 100°C, the wurtzite structure with highly preferred orientation along the (002) plane of the ZnO film is prepared and the elliptical shape particles distributed uniformly on the ZnO film surface. The higher substrate temperature can offer more kinetic energy for mobility of particle on the surface to achieve other crystalline growth, resulting in the highly c-axis-oriented crystalline structure is destroyed.

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“…Nevertheless, Ga-doped ZnO has several advantages, such as less reactive and more resistant to oxidation than Al [8] , closer radius to Zn 2+ (0.060 nm) than that of Al 3+ (0.053 nm) [9] . Lots of methods are reported for preparing thin films of doped ZnO, such as electron beam evaporation [10] , sol-gel [11,12] , chemical spray [13][14] and DC and RF Magnetron sputtering [15,16] . Among these deposition techniques, magnetron sputtering has became the most widely used for preparing TCO film due to its cheap setup, simple to operate, strong adhesion, high deposition rate, high uniform films, high packing density films, and it is considered to be the most available deposition method.…”

Section: Introductionmentioning

confidence: 99%

Effect of Gallium Doping on the Properties of GZO Target

Liu

Cai

Zhang³

et al. 2013

AMR

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The main purpose of this paper was to analyze how the doping content of Ga2O3 effect the Gallium doped zinc oxide (GZO) targets. GZO targets were prepared by air sintering. The density, sheet resistance, bending strength and Vickers hardness were measured. The morphologies and microstructures were characterized by XRD and SEM. The results showed that GZO target with Ga2O3 content of 1wt% showed the best properties which corresponded to the highest relative density and bending strength of 99.2 % and 91.79MPa respectively, and the lowest sheet resistance of 7.36Ω/. While the Ga2O3 content was higher (2 wt% or 3 wt %), the second phase came out.

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Fabrication of tridoped p-ZnO thin film and homojunction by RF magnetron sputtering

Cited by 6 publications

References 31 publications

A Comparative Study on p-ZnO:AlAs/n-ZnO:Al and p-ZnO:AlAsN/n-ZnO:Al Bilayer Homojunction Diodes Performance

A Comparative Study on p-ZnO:AlAs/n-ZnO:Al and p-ZnO:AlAsN/n-ZnO:Al Bilayer Homojunction Diodes Performance

The Preparation of the Highly Preferred Orientation of Wurtzite Structure Zinc Oxide Films

Effect of Gallium Doping on the Properties of GZO Target

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