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Zinc oxide (ZnO) films are prepared on n-Si substrates by means of radio frequency (RF) magnetron sputtering method. The influences of substrate temperature on the crystal orientation and crystalline structure of ZnO films are investigated by X-ray diffraction (XRD) and Raman spectroscopy. The surface morphologies are studied by scanning electron microscope (SEM). It is indicated that ZnO films with wurtzite structure were successfully prepared. When the substrate temperature reduced to 100°C, the wurtzite structure with highly preferred orientation along the (002) plane of the ZnO film is prepared and the elliptical shape particles distributed uniformly on the ZnO film surface. The higher substrate temperature can offer more kinetic energy for mobility of particle on the surface to achieve other crystalline growth, resulting in the highly c-axis-oriented crystalline structure is destroyed.

Zinc oxide (ZnO) films were prepared on Si substrates and then aluminum nitride (AlN) films were deposited on ZnO films by radio frequency (RF) magnetron sputtering. The crystal orientation, crystallite structure and surface morphology of AlN/ZnO films were characterized by X-ray diffraction (XRD), Raman spectrum and scanning electron microscopy (SEM). It was indicated that the AlN films were closely deposited on the ZnO film and had good crystallinity. Moreover, about 1μm-sized crystal particles with high c-axial orientation distributed uniformly on the AlN/ZnO film surface. It was indicated that ZnO could be a promising candidate as buffer layer for preparation of AlN thin films.

The TiN ceramic films were deposited on Si (100) substrates with Al and Ti buffer layers by direct current reactive magnetron sputtering in the mixture gas atmosphere of argon and nitrogen. X-ray diffraction (XRD), Raman spectroscopy, scanning electronic microscope (SEM), nanohardness test and ultra violet-visible-near infrared (UV-VIS-NIR) spectrophotometer were employed to analyze the structure, mechanics and optical characteristics of the TiN films respectively. Analyses of XRD and Raman showed that all the TiN films deposited on Al and Ti buffer layers with TiN (111)-preferred orientations had polycrystalline structures, and the TiN film deposited on Ti buffer layer had a better crystallinity, smaller surface roughness, higher hardness and larger elastic modulus than those of the TiN film deposited on Al buffer layer. Moreover, the reflectivity of the Ti/TiN film became higher than Al/TiN film above λ=645 nm. At λ=1200 nm, the Ti/TiN film showed the maximum reflectivity of 81.8%. These conclusions also showed that the metal multilayer TiN films have important application and research prospect in terms of solar control coatings or resistance to high temperature in building coating material.