Effects of atomic-hydrogen assistance on hot-wall epitaxy growth of heterostructures

Growth by molecular beam epitaxy and interfacial reactivity of MnSb on InP(001)

“…High-quality crystalline films have been grown on various III-V semiconductor substrates using techniques such as hot wall epitaxy [9][10][11][12] and molecular beam epitaxy (MBE) [13][14][15]. Although reported optimum growth conditions vary considerably, substrate temperatures are generally in the range 200-400 C with Sb-rich flux ratio.…”

Effect of Atomic Hydrogen on Molecular-Beam Epitaxy of MnAs/GaAs Heterostructures

“…similarly, as described regarding the MBE of InAs/GaAs and GaAs/InP [8] as well as the HWE of MuSb/GaAs with the supply of H- [9]. H-always cover the top surface of the epilayer as metallic hydrides via surface segregation, and act as surfactants which limit the movement of adatoms on the growing surface, resulting in a suppression of 3D island growth of MnAs.…”

“…Chun et al have used atomic hydrogen (He) in the InAs/GaAsandGaAs/lnPheterostructures [8]. We have alsousedH-inthe hot-wall epitaxy (HWE)ofMnSb on GaAs, and shown that the'irradation of H-improves the swface smoothness [9]. In this paper, we report on the considerable effect ofH-not only on the surface smoothness but also on the growth drection in the MBE growth of MnAs/GaAs heterostructures.…”

Uniform multiatomic step arrays formed by atomic hydrogen assisted molecular beam epitaxy on GaAs (331) substrates

“…The step arrays show a systematic increase of the step height with the growth temperature, while the lateral periodicity remains almost unchanged. It is noteworthy, that this is still a topic of considerable debate in the case of GaAs ͑100͒ surfaces, [11][12][13][14] where clear modifications of the surface morphology in the presence of atomic hydrogen are hardly observed. Moreover, atomic hydrogen irradiation strongly improves the uniformity of the step arrays which allows the fabrication of up to 13 nm high steps with straight step edges over a length of 10 m. In Si-modulation-doped GaAs/͑AlGa͒As heterostructures the presence of the quasi-periodic step arrays manifest themselves in a pronounced anisotropy of the conductivity of electrons parallel and perpendicular to the step edges.…”