Effects of bias voltage on microwave plasma used for diamond growth

Yugo, Shigemi; Ishigaki, N.; Hirahara, K.; Sano, J.; Sone, Takumi; Kimura, T.

doi:10.1016/s0925-9635(99)00021-7

Cited by 12 publications

(3 citation statements)

References 3 publications

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“…Yugo et al measured a floating potential of the plasma by inserting a probe needle. 29 However, they did not measure the electric potential as a function of x. Since the electronic temperature is relevant to the electric potential of the quasineutral region and the ion sheath, the measurement of V(x) will give important information on T e , too.…”

Section: Resultsmentioning

confidence: 99%

Theoretical analysis of the diffusive ion in biased plasma enhanced diamond chemical vapor deposition

Saito

Sano

Ishigaki

et al. 2001

Journal of Applied Physics

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Articles you may be interested inThe use of optical microscopy to examine crystallite nucleation and growth in thermally annealed plasma enhanced chemical vapor deposition and hot wire chemical vapor deposition a-Si:H films Evidence of electron-emission-enhanced nucleation of diamonds in microwave plasma-enhanced chemical vapor deposition Appl.Particle generation and thin film surface morphology in the tetraethylorthosilicate/oxygen plasma enhanced chemical vapor deposition process

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Section: Resultsmentioning

confidence: 99%

Theoretical analysis of the diffusive ion in biased plasma enhanced diamond chemical vapor deposition

Saito

Sano

Ishigaki

et al. 2001

Journal of Applied Physics

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“…At the same time, the quantity of activated gas molecules and activated chemical radicals in the plasma will increase. The highly ionized plasma will cause self-biasing of potential drop on the substrate surface, 14) thus yielding diamond film of high nucleation density. However, the parameters of the plasmaactivated gas used in diamond synthesis, such as type, concentration, electron state (molecule, radical, excited state and ionization state) and gassed species can be employed to derive directly the response mechanism of the nucleation process (nucleation density, orientation, structural defect and impurity density control).…”

Section: Resultsmentioning

confidence: 99%

Effect of CH/C<SUB>2</SUB> Species Density on Surface Morphology of Diamond Film Grown by Microwave Plasma Jet Chemical Vapor Deposition

Chang

2008

Mater. Trans.

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The present research employs in-situ plasma Optical Emission Spectroscopy (OES) to explore the effect of microwave plasma jet chemical vapor deposition (MPJCVD) on activating CH 4 þ H 2 plasma environment and synthesizing diamond film. Surface morphology and main orientation of lattice plane of the diamond synthesized under different processing parameters are also examined. Since species such as CH, H 2 , hydrogen Balmer alpha (H ), carbon dimer (C 2 ) and hydrogen Balmer beta H in the plasma radical are easily influenced by gas concentration, substrate temperature and processing parameters, in-situ OES is employed to diagnose in-situ OES diagnosing is employed to composition of plasma species in the synthesis of diamond film. Our findings reveal that species such as CH, C 2 and H in microwave plasma jet have significant influence on grain size, surface morphology and H/C carbon concentration. The Raman spectrum measurement can prove the relationship between CH/C 2 species density and diamond surface morphology.

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“…The properties of a-C:H films can be varied from soft polymer-like carbon to hard diamond-like carbon (DLC) depending on deposition conditions [7]. Intensive studies on deposition methods [8][9][10][11][12][13][14][15][16], physical properties, e.g. electrical [17][18][19][20], optical [21][22][23][24][25], mechanical [26][27][28] and other properties [29,30] of a-C:H films have been performed in the past.…”

Section: Introductionmentioning

confidence: 99%

a-C:H/a-C:H(N) thin film deposition using 2.45 GHz expanding surface wave sustained plasmas

Hong¹,

Douai²,

Berndt³

et al. 2005

Plasma Sources Sci. Technol.

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Thin film properties such as homogeneity (radial profiles), optical constants, carbon density in the film, and the surface structures are strongly dependent on deposition conditions. We have investigated a-C:H/a-C:H(N) thin film deposition by expanding Ar-CH 4 and Ar/N 2 -CH 4 surface wave sustained plasmas at a frequency of 2.45 GHz. The influence of the plasma parameters such as pressure, input power, gas mixture rate, and an external bias voltage on the change of the film properties is systematically studied. An external bias applied to the substrate leads to more dense and harder a-C:H films, i.e. change from soft polymer-like to hard diamond-like. Rutherford backscattering and atomic force microscope surface topology confirm the densification of the films.

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Effects of bias voltage on microwave plasma used for diamond growth

Cited by 12 publications

References 3 publications

Theoretical analysis of the diffusive ion in biased plasma enhanced diamond chemical vapor deposition

Theoretical analysis of the diffusive ion in biased plasma enhanced diamond chemical vapor deposition

Effect of CH/C<SUB>2</SUB> Species Density on Surface Morphology of Diamond Film Grown by Microwave Plasma Jet Chemical Vapor Deposition

a-C:H/a-C:H(N) thin film deposition using 2.45 GHz expanding surface wave sustained plasmas

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