Effects of bismuth doping on the thermoelectric properties of Cu3SbSe4 at moderate temperatures

Li, X.Y.; Li, D.; Xin, Haohui; Zhang, Jian; Song, Caixia; Qin, Xuying

doi:10.1016/j.jallcom.2013.01.131

Cited by 78 publications

(41 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Relatively low thermal conductivities, which as expected decreased with temperature, were obtained for all the analyzed materials. For undoped CASe, κ dropped from 1.60 Wm −1 K −1 to 0.81 Wm −1 K −1 (Figure 4c) in the temperature range from 327 K to 653 K. These are lower κ values than those previously reported for bulk CASe, 19,20,53,59 but slightly higher than those reported for nanostructured CASe produced by coprecipitation, 32 and much higher than the estimated minimum κ of this material (0.26 Wm −1 K −1 ). 60,61 Lower lattice thermal conductivities (κ L ) were obtained with the incorporation of Sn due to the introduced lattice distortion and the increased density of point defects ( Figure S18d).…”

Section: Resultsmentioning

confidence: 53%

Solution-based synthesis and processing of Sn- and Bi-doped Cu₃SbSe₄nanocrystals, nanomaterials and ring-shaped thermoelectric generators

et al. 2017

View full text Add to dashboard Cite

Copper-based chalcogenides that comprise abundant, low-cost, and environmental friendly elements are excellent materials for a number of energy conversion applications, including photovoltaics, photocatalysis, and thermoelectrics (TE). In such applications, the use of solution-processed nanocrystal (NC) to produce thin films or bulk nanomaterials has associated several potential advantages, such as high material yield and throughput, and composition control with unmatched spatial resolution and cost. Here we report on the production of Cu3SbSe4 (CASe) NCs with tuned amounts of Sn and Bi dopants. After proper ligand removal, as monitored by nuclear magnetic resonance and infrared spectroscopies, these NCs were used to produce dense CASe bulk nanomaterials for solid state TE energy conversion. By adjusting the amount of extrinsic dopants, dimensionless TE figures of merit (ZT) up to 1.26 at 673 K were reached. Such high ZT values are related to an optimized carrier concentration by Sn doping, a minimized lattice thermal conductivity due to efficient phonon scattering at point defects and grain boundaries, and to an increase of the Seebeck coefficient obtained by a modification of the electronic band structure with the Bi doping. Nanomaterials were further employed to fabricate ring-shaped TE generators to be coupled to hot pipes and which provided 20 mV and 1 mW per TE element when exposed to a 160 °C temperature gradient. The simple design and good thermal contact associated with the ring geometry and the potential low cost of the material solution processing may allow the fabrication of TE generators with short payback times.Peer ReviewedPostprint (author's final draft

show abstract

Section: Resultsmentioning

confidence: 53%

Solution-based synthesis and processing of Sn- and Bi-doped Cu₃SbSe₄nanocrystals, nanomaterials and ring-shaped thermoelectric generators

et al. 2017

View full text Add to dashboard Cite

show abstract

“…Doping was widely employed to improve the carrier concentration and the electrical conductivity, such as CuIn(Ga) 1−x M x Te 2 (M=Zn, Mn, Cd, Hg, Ni, Ag, Gd) [114][115][116][117][118], Cu 1−x Fe 1+x S 2 [119], Cu 3 Sb 1−x M x Se 4 (M=Al, In, Sn, Ge, Bi) [35,[120][121][122] and Cu 2 Cd 1−x In x SnSe 4 [123]. Introducing vacancies is another practical way for the electrical transport optimization as well as the lattice thermal conductivity minimizing.…”

Section: Tetragonal Diamond-like Compoundsmentioning

confidence: 99%

Copper chalcogenide thermoelectric materials

et al. 2018

View full text Add to dashboard Cite

Cu-based chalcogenides have received increasing attention as promising thermoelectric materials due to their high efficiency, tunable transport properties, high elemental abundance and low toxicity. In this review, we summarize the recent research progress on this large family compounds covering diamond-like chalcogenides and liquid-like Cu 2 X (X=S, Se, Te) binary compounds as well as their multinary derivatives. These materials have the general features of two sublattices to decouple electron and phonon transport properties. On the one hand, the complex crystal structure and the disordered or even liquid-like sublattice bring about an intrinsically low lattice thermal conductivity. On the other hand, the rigid sublattice constitutes the charge-transport network, maintaining a decent electrical performance. For specific material systems, we demonstrate their unique structural features and outline the structure-performance correlation. Various design strategies including doping, alloying, band engineering and nanostructure architecture, covering nearly all the material scale, are also presented. Finally, the potential of the application of Cu-based chalcogenides as high-performance thermoelectric materials is briefly discussed from material design to device development.

show abstract

“…Therefore, Cu 3 SbSe 4 has a relatively low thermal conductivity. However, the electrical properties of intrinsic Cu 3 SbSe 4 is poor due to its low hole concentration (p), which decreases the thermoelectric performance and leads to a low ZT value in the middle temperature range [15][16][17][18]. Theoretically, partial substitution on the Sb site of the Cu 3 SbSe 4 can tune its electrical conductivity so as to enhance the thermoelectric performance.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds via Gallium Doping

Zhao

2017

Energies

View full text Add to dashboard Cite

show abstract

Effects of bismuth doping on the thermoelectric properties of Cu3SbSe4 at moderate temperatures

Cited by 78 publications

References 13 publications

Solution-based synthesis and processing of Sn- and Bi-doped Cu₃SbSe₄nanocrystals, nanomaterials and ring-shaped thermoelectric generators

Solution-based synthesis and processing of Sn- and Bi-doped Cu₃SbSe₄nanocrystals, nanomaterials and ring-shaped thermoelectric generators

Copper chalcogenide thermoelectric materials

Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds via Gallium Doping

Contact Info

Product

Resources

About

Effects of bismuth doping on the thermoelectric properties of Cu3SbSe4 at moderate temperatures

Cited by 78 publications

References 13 publications

Solution-based synthesis and processing of Sn- and Bi-doped Cu3SbSe4nanocrystals, nanomaterials and ring-shaped thermoelectric generators

Solution-based synthesis and processing of Sn- and Bi-doped Cu3SbSe4nanocrystals, nanomaterials and ring-shaped thermoelectric generators

Copper chalcogenide thermoelectric materials

Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds via Gallium Doping

Contact Info

Product

Resources

About

Solution-based synthesis and processing of Sn- and Bi-doped Cu₃SbSe₄nanocrystals, nanomaterials and ring-shaped thermoelectric generators

Solution-based synthesis and processing of Sn- and Bi-doped Cu₃SbSe₄nanocrystals, nanomaterials and ring-shaped thermoelectric generators