Articles you may be interested inCrystal AlN deposited at low temperature by magnetic field enhanced plasma assisted atomic layer deposition J. Vac. Sci. Technol. A 31, 01A114 (2013); 10.1116/1.4764112 Fourth-generation plasma immersion ion implantation and deposition facility for hybrid surface modification layer fabrication Rev. Sci. Instrum. 79, 023306 (2008); 10.1063/1.2870088Passivation layer on polyimide deposited by combined plasma immersion ion implantation and deposition and cathodic vacuum arc technique Characteristics and anticoagulation behavior of polyethylene terephthalate modified by C 2 H 2 plasma immersion ion implantation-deposition J.Aluminum nitride ͑AlN͒ is of interest in the industry because of its excellent electronic, optical, acoustic, thermal, and mechanical properties. In this work, aluminum nitride films are deposited on silicon wafers ͑100͒ by metal plasma immersion ion implantation and deposition ͑PIIID͒ using a modified hybrid gas-metal cathodic arc plasma source and with no intentional heating to the substrate. The mixed metal and gaseous plasma is generated by feeding the gas into the arc discharge region. The deposition rate is found to mainly depend on the Al ion flux from the cathodic arc source and is only slightly affected by the N 2 flow rate. The AlN films fabricated by this method exhibit a cubic crystalline microstructure with stable and low internal stress. The surface of the AlN films is quite smooth with the surface roughness on the order of 1/2 nm as determined by atomic force microscopy, homogeneous, and continuous, and the dense granular microstructures give rise to good adhesion with the substrate. The N to Al ratio increases with the bias voltage applied to the substrates. A fairly large amount of O originating from the residual vacuum is found in the samples with low N:Al ratios, but a high bias reduces the oxygen concentration. The compositions, microstructures and crystal states of the deposited films are quite stable and remain unchanged after annealing at 800°C for 1 h. Our hybrid gas-metal source cathodic arc source delivers better AlN thin films than conventional PIIID employing dual plasmas.