Effects of CeO2 buffer layer thickness on the orientation and dielectric properties of Ba(Zr0.20Ti0.80)O3 thin films

Effects of oxide buffer layers on the microstructure and electrical properties of PLZST 2/87/10/3 antiferroelectric thin films

“…For example, in order to improve the dielectric properties of FE thin films and overcome the effect caused by substrates, an oxide buffer layer was often introduced between FE films and substrates. TiO 2 , Ta 2 O 5 , MgO, Al 2 O 3 , CeO 2 and SiO 2 , were the most popularly used buffer layers [13][14][15][16][17]. However, the effects of oxide buffer layer on the microstructure and field-induced phase transformation between AFE and FE state are rarely reported.…”

Dielectric properties, microstructure and diffuse transition of Ni-doped Ba(Zr0.2Ti0.8)O3 ceramics

“…In recent years, most studies are focused on the temperature dependence of the dielectric properties, optical, relaxor behavior and domain structure of BZT materials [9][10][11][12][13][14][15][16][17][18][19][20]. The effect of doping on microstructure and dielectric properties of BZT materials has been extensively studied to further improve their performance [21][22][23][24][25][26][27][28][29][30][31].…”

MICROSTRUCTURE AND FERROELECTRIC PROPERTIES OF BaZr0.2Ti0.8O3 FILMS PREPARED BY SOL-GEL

“…However, the leakage current often abruptly turns up in orders of magnitude as the applied field exceeds a critical value of several hundreds kV/cm, and breakdown occurs at a field around 2MV/cm [2,4]. Recently, BaZr x Ti 1-x O 3 (BZT) has been chosen as an alternative to BST in the fabrication of ceramic capacitors [5][6][7]. The Zr 4+ ion (0.087 nm) is chemically more stable than the Ti 4+ (0.068 nm) and has a larger ionic size to expand the lattice.…”

“…The Zr 4+ ion (0.087 nm) is chemically more stable than the Ti 4+ (0.068 nm) and has a larger ionic size to expand the lattice. Therefore, the conduction by electron hopping between Ti 4+ and Ti 3+ would be depressed by the substitution of Ti with Zr [5][6][7].…”