Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic-Layer Deposition

Yoon, Sung‐Min; Seong, Nak-Jin; Choi, Kyu-Jeong; Seo, Gi-Ho; Shin, Woong-Chul

doi:10.1021/acsami.7b04637

Cited by 71 publications

(51 citation statements)

References 35 publications

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“…4,5 Atomic layer deposition (ALD) has recently been reported as a replacement for the conventional sputtering method for fabricating a-IGZO thin lms. 6,7 Radio-frequency magnetron sputtering has been the backbone for developing a-IGZO back-plane devices during the recent mass production of active-matrix organic light emitting diode (AMOLED) displays, but plausible plasma damages and high-temperature post-annealing processes may deteriorate the process margins from achieving higher performance and wider application elds. Furthermore, since ALD is dominated by a self-limiting growth mechanism, lm thickness and composition can be precisely controlled even on large-area substrates, and its good step coverage with excellent lm conformity can be extremely benecial in various applications.…”

Section: Introductionmentioning

confidence: 99%

Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition

et al. 2018

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Bias temperature stress stabilities of thin-film transistors (TFTs) using In-Ga-Zn-O (IGZO) channels prepared by the atomic layer deposition process were investigated with varying channel thicknesses (10 and 6 nm). Even when the IGZO channel thickness was reduced to 6 nm, the device exhibited good characteristics with a high saturation mobility of 15.1 cm 2 V À1 s À1 and low sub-threshold swing of 0.12 V dec À1. Excellent positive and negative bias stress stabilities were also obtained. When positive bias temperature stress (PBTS) stability was tested from 40 to 80 C for 10 4 s, the threshold voltages (V TH ) of the device using the 6 nm-thick IGZO channel shifted negatively, and the V TH shifts increased from À0.5to À6.9 V with the increasing temperature. Time-dependent PBTS instabilities could be explained by a stretched-exponential equation, representing a charge-trapping mechanism.

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Section: Introductionmentioning

confidence: 99%

Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition

et al. 2018

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“…Therefore, metal‐oxide semiconductors are considered as potential candidates for the active layers due to their wide bandgaps, low process temperatures, tunable carrier concentrations, and high optical transparency . There are some reports on InGaZnO (IGZO), MgZnO, and ZnHfO with superior performance. Although IGZO is the most attractive material for next‐generation displays, the scarcity of indium and poison of gallium as well as the complex composition are real hurdles to develop the IGZO TFTs.…”

Section: Introductionmentioning

confidence: 99%

Transparent and Flexible Thin‐Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition

Chen

Zhang

Wan

et al. 2018

Adv Elect Materials

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High‐performance, transparent, and flexible thin‐film transistors (TFTs) with polycrystalline channels in a bottom‐gate structure are successfully fabricated at extremely low temperatures of 80, 90, and 100 °C by atomic layer deposition (ALD) in which ZnO and Al2O3 are used as channels and dielectric layers, respectively. The transistors are superior to silicon‐based TFTs in which high temperatures are necessarily involved in both preparation and postgrowth annealing. Among all devices, TFTs grown at 100 °C exhibit the best performance which can be attributed to the lowest grain boundary trap density. Additionally, the TFTs are successfully transferred to plastic substrates without any performance degradation, which shows a high mobility of 37.1 cm2V−1 s−1, a high on/off‐state current ratio of 107 at VDS = 0.1 V, a small subthreshold swing of 0.38 V dec−1, and a proper threshold voltage of 1.34 V as well as an excellent bias stability.

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“…More information on the influence of the composition of materials on devices and the effects of temperature transistors through the application of the ALD process can be found in the papers referenced [182][183][184][185][186][187][188][189][190][191][192][193].…”

Section: Transistorsmentioning

confidence: 99%

New development of atomic layer deposition: processes, methods and applications

Oviroh

Akbarzadeh

Pan

et al. 2019

Science and Technology of Advanced Materials

377

200

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Atomic layer deposition (ALD) is an ultra-thin film deposition technique that has found many applications owing to its distinct abilities. They include uniform deposition of conformal films with controllable thickness, even on complex three-dimensional surfaces, and can improve the efficiency of electronic devices. This technology has attracted significant interest both for fundamental understanding how the new functional materials can be synthesized by ALD and for numerous practical applications, particularly in advanced nanopatterning for microelectronics, energy storage systems, desalinations, catalysis and medical fields. This review introduces the progress made in ALD, both for computational and experimental methodologies, and provides an outlook of this emerging technology in comparison with other film deposition methods. It discusses experimental approaches and factors that affect the deposition and presents simulation methods, such as molecular dynamics and computational fluid dynamics, which help determine and predict effective ways to optimize ALD processes, hence enabling the reduction in cost, energy waste and adverse environmental impacts. Specific examples are chosen to illustrate the progress in ALD processes and applications that showed a considerable impact on other technologies.

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Effects of Deposition Temperature on the Device Characteristics of Oxide Thin-Film Transistors Using In–Ga–Zn–O Active Channels Prepared by Atomic-Layer Deposition

Cited by 71 publications

References 35 publications

Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition

Investigations on the bias temperature stabilities of oxide thin film transistors using In–Ga–Zn–O channels prepared by atomic layer deposition

Transparent and Flexible Thin‐Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition

New development of atomic layer deposition: processes, methods and applications

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