Effects of dielectric structure of HfO2 on carrier generation rate in Si substrate and channel mobility

Abstract

This letter presents the effects of surface preparation for hafnium-based dielectrics on the bulk carrier generation rates and the carrier mobility. Different surface preparations result in different interfacial layers. Nitrogen-incorporated layers effectively block impurity penetration from hafnium oxide, and lead to the increase of bulk carrier generation lifetime. However, nitrogen-incorporated interface layers increase interface state density and degrade channel mobility, even though bulk carrier generation lifetime is increased. Thus, mobility degradation is preliminarily caused by fixed charge and interface states of the high-k dielectrics.

Direct observation of two-dimensional growth at SiO2/Si(111) interface

“…The thickness of the interfacial SiO 2 layers that will be inserted between high-k dielectrics and Si substrates [2][3][4][5] must be controlled to within a few atomic layers or less. However, at the atomic level, the oxidation mechanism is not yet completely understood.…”

DIELECTRIC CHARACTERIZATION OF METAL-OXIDE-SEMICONDUCTOR CAPACITOR USING Ga2O3 DIELECTRICS ON p-Si (100)

“…Effective dielectrics require a wide energy band-gap, a large gate leakage current, good interface quality, excellent process compatibility, and high stability with the Si surface [2]. A number of gate dielectrics, such as ZrO 2 , AlN, SiO 2 , Si 3 N 4 , Ta 2 O 5 , Ga 2 O 3 (Gd 2 O 3 ), and HfO 2 , have been used in metal/oxide/semiconductor structures [3][4][5][6][7]. It is known that Ga 2 O 3 has five phases, which are, α, β, γ , δ, and ε [8].…”