Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors

Pao, H.C.; Sah, C. T.

doi:10.1016/0038-1101(66)90068-2

Cited by 559 publications

(174 citation statements)

References 11 publications

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“…The junction between drain and substrate is widened by the reverse bias applied. The Pao-Sah model [32][33][34][35] describes the MOSFET structure very well, and the introduction into this model of the charge sheet approximation of the inversion layer, is making the model not only accurate but simple. In addition, the charge sheet model [28,36] is the best basis for understanding the long channel device [37][38][39][40][41][42].…”

Section: Mos Field Effect Transistor Mosfetmentioning

confidence: 99%

Surface effects in segmented silicon sensors

Schwandt

Fretwurst

Garutti

et al. 2017

Nuclear Instruments and Methods in Physics Research Section A:

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PROF. DR. MICHAEL POTTHOFFii "Τὸν δὲ νοῦ καί ἐπιστήμης ἐραστὴν ἀνάγκη τὰς τῆς ἔμφρονος φύσεως αἰτίας πρώ-τας μεταδιώκειν." Πλάτωνος, Τίμαιος, Κεφ. 16 "The lover of reason and knowledge must first seek for the causes which belong to the rational order."Plato, Timaeus, Ch. 16 iii To my parents. . . iv AbstractSilicon detectors in Photon Science and Particle Physics require silicon sensors with very demanding specifications. New accelerators like the European X-ray Free Electron Laser (EuXFEL) and the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), pose new challenges for silicon sensors, especially with respect to radiation hardness. High radiation doses and fluences damage the silicon crystal and the SiO 2 layers at the surface, thus changing the sensor properties and limiting their life time. Non-Ionizing Energy Loss (NIEL) of incident particles causes silicon crystal damage. Ionizing Energy Loss (IEL) of incident particles increases the densities of oxide charge and interface traps in the SiO 2 and at the Si-SiO 2 interface.In this thesis the surface radiation damage of the Si-SiO 2 system on high-ohmic Si has been investigated using circular MOSFETs biased in accumulation and inversion at an electric field in the SiO 2 of about 500 kV/cm. The MOSFETs have been irradiated by X-rays from an X-ray tube to a dose of about 17 kGy(SiO 2 ) in different irradiation steps. Before and after each irradiation step, the gate voltage has been cycled from inversion to accumulation conditions and back. From the dependence of the drain-source current on gate voltage the threshold voltage of the MOSFET and the hole and electron mobility at the Si-SiO 2 interface were determined. In addition, from the measured drain-source current the change of the oxide charge density during irradiation has been determined. The interface trap density and the oxide charge has been determined separately using the subthreshold current technique based on the Brews charge sheet model which has been applied for first time on MOSFETs built on high-ohmic Si. The results show a significant field-direction dependence of the surface radiation parameters. The extracted parameters and the acquired knowledge can be used to improve simulations of the surface radiation damage of silicon sensors.

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Section: Mos Field Effect Transistor Mosfetmentioning

confidence: 99%

Surface effects in segmented silicon sensors

Schwandt

Fretwurst

Garutti

et al. 2017

Nuclear Instruments and Methods in Physics Research Section A:

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“…If the electron drift-diffusion current in the y position of the channel is expressed in terms of the electron quasi-Fermi level E Fn (y) by: where Q n is the electron charge density in the channel and μ eff is the electron effective mobility, the drain current under assumption of the gradual channel approximation can be expressed as in the Pao-Sah model of the MOS transistor [2] in the following way:…”

Section: Model Of the Drain Currentmentioning

confidence: 99%

Simulation of the gate tunnel current in the double gate (DG) MOS transistor

Majkusiak

Walczak

2006

J Comput Electron

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“…The term "compact model" was probably first used by Gummel and Poon (GP) in 1970 for the GP bipolar junction transistor (BJT) model [1]. In the mainstream complementary metal-oxide-semiconductor (CMOS), generations of MOS field-effect transistor (FET) CMs have been developed, following the 1978 Brews' charge-sheet approximation (CSA) [2], which are all based on (and still benchmarked to) the 1966 "Pao-Sah double-integral" model [3]. Early MOSFET models include threshold-voltage (V t )-based models; and contemporary models include inversioncharge (Q i )-based and surface-potential (φ s )-based models (see, e.g., a review paper in [4]).…”

Section: Introductionmentioning

confidence: 99%

Unification of MOS compact models with the unified regional modeling approach

Zhou

Zhu²,

See

et al. 2011

J Comput Electron

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This paper reviews the development of the MOS-FET model (Xsim), for unification of various types of MOS devices, such as bulk, partially/fully-depleted SOI, doublegate (DG) FinFETs and gate-all-around (GAA) siliconnanowires (SiNWs), based on the unified regional modeling (URM) approach. The complete scaling of body doping and thickness with seamless transitions from one structure to another is achieved with the unified regional surface potential, in which other effects (such as those due to poly-gate doping and quantum-mechanical) can be incorporated. The unique features of the Xsim model and the essence of the URM approach are described.

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Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors

Cited by 559 publications

References 11 publications

Surface effects in segmented silicon sensors

Surface effects in segmented silicon sensors

Simulation of the gate tunnel current in the double gate (DG) MOS transistor

Unification of MOS compact models with the unified regional modeling approach

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