Effects of dissolved oxygen on passive behavior of stainless alloys

Raja, Krishnan S.; Jones, D. A.

doi:10.1016/j.corsci.2005.05.048

Cited by 80 publications

(48 citation statements)

References 26 publications

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“…Also, one can observe that the OCP values are more positive for the Ag-Sn system. Figures 3 and 4 show that film growth kinetics are complex giving three distinct behaviours [22][23][24]. Figure 3A shows passivation is characterised by a constant n value of 0.35, which reaches a null value (n = 0), thus indicating a stationary thickness of the passive film.…”

Section: Passive Current and Open Circuit Potential Measurements For mentioning

confidence: 99%

Electrochemical investigation of the passive behaviour of biomaterials based on Ag–Sn and Cu–Zn–Al in carbonate buffer in the absence and presence of chloride

et al. 2007

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The electrochemical behaviour of biomaterials based on Cu-Zn-Al (cubic Cu 3 Zn phase) and Ag-Sn (orthorhombic Ag 3 Sn and hexagonal Ag 4 Sn phases) alloys was investigated in carbonate buffer solutions (pH 9.66) in the absence and presence of chloride, using different electrochemical techniques. Analyses of the open circuit potential and the potentiodynamic polarisation curves showed that the passivation domain and the corrosion parameters depend on alloy composition and chloride concentration. Chronoamperometric studies showed that passivation kinetics and corrosion of the passive film are both well described by a linear ln(i) versus ln(t) relation. The passive film formed on the Ag-Sn alloy is less susceptible to corrosion when compared to the Cu-Zn-Al system. The impedance data obtained in the passive region for the Cu-Zn-Al alloy showed that the passive layer is compact. In contrast, the impedance data obtained for the Ag-Sn alloy showed that the passive layer is formed by a compact oxide layer covered by a porous oxide gel layer.Mott-Schottky analysis showed that the passive film formed on the Cu-Zn-Al alloy behaves as a p-type semiconductor.

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Section: Passive Current and Open Circuit Potential Measurements For mentioning

confidence: 99%

Electrochemical investigation of the passive behaviour of biomaterials based on Ag–Sn and Cu–Zn–Al in carbonate buffer in the absence and presence of chloride

et al. 2007

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“…sc versus E plot, nor the calculation of charge carrier density within the passive film, as only the linear region of the graph is considered to calculate the slope [10].…”

Section: Mott-schottkymentioning

confidence: 99%

“…where q is the elementary charge (−1.602 × 10 −19 C for an electron and +1.602 × 10 −19 C for electron hole), N q is the density of charge carriers (N A for acceptors and N D for donors), (ε is the dielectric constant of the passive film, which is assumed as 15.6 [10]), ε 0 is the vacuum permittivity (8.854 × 10 −14 F/cm), k B is the Boltzmann constant (1.38 × 10 −23 J/K), T is the absolute temperature, E is the applied potential, and E fb is the flat-band potential. At room temperature, k B T/q is neglected because it is only about 25 mV.…”

Section: Mott-schottkymentioning

confidence: 99%

Diffusivity of Point Defects in the Passive Film on Stainless Steel

Fattah‐alhosseini

Alemi

Banaei

2011

International Journal of Electrochemistry

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The semiconductor properties of passive films formed on AISI 316 stainless steel in sulfuric acid solution were studied by employing Mott-Schottky analysis in conjunction with the point defect model. The donor density of the passive films, which can be estimated by the Mott-Schottky plots, changes depending on the film formation potentials. Based on the Mott-Schottky analysis, an exponential relationship between donor density and the film formation potentials of the passive films was developed. The results showed that the donor densities evaluated from Mott-Schottky plots are in the range 2-3 × 10 21 cm −3 and decreased with the film formation potential. By assuming that the donors are oxygen ion vacancies and/or cation interstitials, the diffusion coefficient of the donors, (D O ), is calculated to be approximately 3.12 × 10 −16 cm 2 /s.

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“…Raja and D.A. Jones studied, [8] they concluded that passive films on 304 SS exhibit the same electronic properties, and probably have the same chemical structure, based on the Mott-Schottky plots results of the 304 SS, whether formed by constant or variable potential control in deaerated solutions, or by exposure to the solution dissolved oxygen. They think it could be proposed that the inner corrosion resistance barrier film of 304 SS in 0.5 M H 2 SO 4 solution could be of n-type semiconductor and the outer layer could be of p-type semiconductor.…”

Section: The Electrochemical Impedance Spectroscopymentioning

confidence: 97%

“…[7] Dissolved oxygen only provides the necessary potential for passivation and provides no chemical species necessary for passivation. [8] The American Iron and Steel Institute (AISI) 304 SS in the solutions were modelled by equivalent electrical circuits. The electrochemical impedance spectroscopy (EIS) technique is well established as a powerful method for testing phenomena that take place in a metal/solution interphase when the whole surface undergoes the same process.…”

Section: Introductionmentioning

confidence: 99%