2015
DOI: 10.1109/tdmr.2015.2491338
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Effects of Electrical Stress on the InGaP/GaAs Heterojunction Phototransistor

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Cited by 4 publications
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“…The alternate current (AC) impedance of the LED receiver can be controlled by the injected light [14]. InGaN-based or InGaAsP-based phototransistors have also been studied [15], [16]. The former is advantageous in low dark current and high responsivity of the white-LED based VLC receivers.…”
Section: Introductionmentioning
confidence: 99%
“…The alternate current (AC) impedance of the LED receiver can be controlled by the injected light [14]. InGaN-based or InGaAsP-based phototransistors have also been studied [15], [16]. The former is advantageous in low dark current and high responsivity of the white-LED based VLC receivers.…”
Section: Introductionmentioning
confidence: 99%