Effects of grain boundary and grain orientation on electrical behavior of polycrystalline ferroelectric field effect transistor

Wang, Fang; Li, Bo; Xu, Baolei; Liu, Longfei; Ou, Yun; Tian, Lei; Wang, Wei

doi:10.1002/pssa.201700277

Cited by 4 publications

(1 citation statement)

References 29 publications

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“…A phase field simulation is applied to obtain the magnitude of the external electric field in which below the 180° domain structure is stable. The detail of the simulation can be seen in our previous work [33]. The simulation results are shown in supplementary materials.…”

Section: Resultsmentioning

confidence: 99%

Giant caloric effects enhanced by the helix polarization at the 180° domain wall in tetragonal BaTiO₃

Zhang¹,

Tan²,

Li³

et al. 2019

J. Phys.: Condens. Matter

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The electrocaloric and elastocaloric properties at the 180° domain wall in the tetragonal BaTiO3 are studied using the Landau–Ginzburg–Devonshire model as a function of the domain wall rotation angle α. The Ising-Bloch character is predicted at the 180° domain wall in tetragonal BaTiO3 under the flexoelectric effect. The electric field-induced adiabatic temperature change (ΔTE) which is induced by the Bloch-type polarization component depends on α, and a giant positive ΔTE appears at α = (π + 12n)/24 where n is an integer. The asymmetry of ΔTE is found around the Bloch-type domain wall. The Bloch-type polarization component has a little contribution to the stress-induced adiabatic temperature change. This calculation indicates a contribution of helix polarization at the domain wall on the caloric effects (CEs) in the ferroelectric materials.

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Section: Resultsmentioning

confidence: 99%

Giant caloric effects enhanced by the helix polarization at the 180° domain wall in tetragonal BaTiO₃

Zhang¹,

Tan²,

Li³

et al. 2019

J. Phys.: Condens. Matter

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Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

Ali

Polakowski

Riedel

et al. 2018

Applied Physics Letters

115

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The recent discovery of ferroelectricity in thin film HfO2 materials renewed the interest in ferroelectric FET (FeFET) as an emerging nonvolatile memory providing a potential high speed and low power Flash alternative. Here, we report more insight into FeFET performance by integrating two types of ferroelectric (FE) materials and varying their properties. By varying the material type [HfO2 (HSO) versus hafnium zirconium oxide (HZO)], optimum content (Si doping/mixture ratio), and film thickness, a material relation to FeFET device physics is concluded. As for the material type, an improved FeFET performance is observed for HZO integration with memory window (MW) comparable to theoretical values. For different Si contents, the HSO based FeFET exhibited a MW trend with different stabilized phases. Similarly, the HZO FeFET shows MW dependence on the Hf:Zr mixture ratio. A maximized MW is obtained with cycle ratios of 16:1 (HfO2:Si) and 1:1 (Hf:Zr) as measured on HSO and HZO based FeFETs, respectively. The thickness variation shows a trend of increasing MW with the increased FE layer thickness confirming early theoretical predictions. The FeFET material aspects and stack physics are discussed with insight into the interplay factors, while optimum FE material parameters are outlined in relation to performance.

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Influence of charge accumulation at the grain boundary on the electrical behavior of a ferroelectric field-effect transistor

et al. 2018

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A phase field method was used to investigate the influence of charge accumulation at the grain boundary on the electrical behavior of a ferroelectric field-effect transistor containing a polycrystalline gate. Both the domain structure and the electrical behavior of the ferroelectric field-effect transistor were found to depend on the coefficient χ, which represents the charge accumulation at the grain boundary. With increasing χ, both the width of the memory window of the capacitance–voltage curves and the on-state source–drain current decreased, while the off-state source–drain current increased. This can be explained in terms of the weakening polarization effect in the grain interior owing to the presence of a built-in electric field caused by the accumulated charge at the grain boundary.

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Effects of grain boundary and grain orientation on electrical behavior of polycrystalline ferroelectric field effect transistor

Cited by 4 publications

References 29 publications

Giant caloric effects enhanced by the helix polarization at the 180° domain wall in tetragonal BaTiO₃

Giant caloric effects enhanced by the helix polarization at the 180° domain wall in tetragonal BaTiO₃

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

Influence of charge accumulation at the grain boundary on the electrical behavior of a ferroelectric field-effect transistor

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Effects of grain boundary and grain orientation on electrical behavior of polycrystalline ferroelectric field effect transistor

Cited by 4 publications

References 29 publications

Giant caloric effects enhanced by the helix polarization at the 180° domain wall in tetragonal BaTiO3

Giant caloric effects enhanced by the helix polarization at the 180° domain wall in tetragonal BaTiO3

Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics

Influence of charge accumulation at the grain boundary on the electrical behavior of a ferroelectric field-effect transistor

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Product

Resources

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Giant caloric effects enhanced by the helix polarization at the 180° domain wall in tetragonal BaTiO₃

Giant caloric effects enhanced by the helix polarization at the 180° domain wall in tetragonal BaTiO₃