Effects of He (90%)/H2 (10%) plasma treatment on electric properties of low dielectric constant SiCOH films

Kim, Hoonbae; Ha, Myung Hoon; Jung, Donggeun; Chae, Heeyeop; Kim, Hyoungsub

doi:10.1016/j.materresbull.2012.04.097

Materials Research Bulletin

2012

DOI: 10.1016/j.materresbull.2012.04.097

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Effects of He (90%)/H2 (10%) plasma treatment on electric properties of low dielectric constant SiCOH films

Hoonbae Kim

Myung Hoon Ha

Donggeun Jung

et al.

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Cited by 4 publications

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Chemical structure characteristics of flexible low-k SiCOH thin films etched by inductively coupled plasma-reactive ion etching process using FTIR and XPS spectra analysis

Poche,

Wirth,

Jang

2024

Microelectronic Engineering

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Effects of He (90%)/H2 (10%) plasma treatment on electric properties of low dielectric constant SiCOH films

Cited by 4 publications

References 12 publications

Chemical structure characteristics of flexible low-k SiCOH thin films etched by inductively coupled plasma-reactive ion etching process using FTIR and XPS spectra analysis

Chemical structure characteristics of flexible low-k SiCOH thin films etched by inductively coupled plasma-reactive ion etching process using FTIR and XPS spectra analysis

Effect of H2/He plasma treatment on porous low dielectric constant materials

Effect of O2 plasma treatment on physical, electrical, and reliability characteristics of low dielectric constant materials

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