Effects of hydrogen flux on the properties of Al-doped ZnO films sputtered in Ar+H2 ambient at low temperature

Liu, W.F.; Du, Guotong; Sun, Yangyang; Bian, Jiming; Cheng, Yi; Yang, Tao; Chang, Yuchun; Xu, Yibin

doi:10.1016/j.apsusc.2006.06.049

Cited by 47 publications

(11 citation statements)

References 22 publications

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“…Thus, effectiveness of hydrogen doping can be enhanced at low by inserting into interstitial (H i ) or in oxygen bond-center (H O ) lattice sites. Besides, it is possible that hydrogen extracts oxygen from thin films, causing the formation of oxygen vacancy and interstitial zinc atoms to increase the carrier concentration [23,24]. With further increasing beyond the abovementioned optimal value, film resistivity started to increase due to the decreased Hall mobility.…”

Section: Resultsmentioning

confidence: 99%

Physical Properties of ZnO Thin Films Codoped with Titanium and Hydrogen Prepared by RF Magnetron Sputtering with Different Substrate Temperatures

Wang

Chao

Liu

et al. 2015

Journal of Nanomaterials

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Transparent conducting titanium-doped zinc oxide (TZO) thin films were prepared on glass substrates by RF magnetron sputtering using 1.5 wt% TiO 2 -doped ZnO as the target. Electrical, structural, and optical properties of films were investigated as a function of H 2 /(Ar + H 2 ) flow ratios ( ) and substrate temperatures ( ). The optimal value for achieving high conducting TZO:H thin film decreased from 10% to 1% when increased from RT to 300 ∘ C. The lowest resistivity of 9.2 × 10 −4 Ω-cm was obtained as = 100 ∘ C and = 7.5%. X-ray diffraction patterns showed that all of TZO:H films had a hexagonal wurtzite structure with a preferred orientation in the (002) direction. Atomic force microscopy analysis revealed that the film surface roughness increased with increasing . The average visible transmittance decreased with increasing for the RT-deposited film, while it had not considerably changed with different for the 300 ∘ C-deposited films. The optical bandgap increased as increased, which is consistent with the Burstein-Moss effect. The figure of merits indicated that = 100 ∘ C and = 7.5% were optimal conditions for TZO thin films as transparent conducting electrode applications. Recently, the density functional theory proposed by van de Walle shows that hydrogen atoms can act as donors

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Section: Resultsmentioning

confidence: 99%

Physical Properties of ZnO Thin Films Codoped with Titanium and Hydrogen Prepared by RF Magnetron Sputtering with Different Substrate Temperatures

Wang

Chao

Liu

et al. 2015

Journal of Nanomaterials

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“…It was also found that the sample prepared with the H 2 flow of 2% shows a slightly bad transparency in the visible region, which is a result from the intergranular zinc atoms due to the extraction of the O from the AZO films by excessive H. It is clear that the H 2 played a significant role in determining the structural, electrical and optical properties in the case of the AZO film. Therefore, it can be concluded that the H 2 flow ratio must be controlled to a moderate level in order to reduce the resistivity without being detrimental to the transmittance of the AZO thin films by the introduction of hydrogen [1].…”

Section: The Electrical Propertiesmentioning

confidence: 99%

“…Al-doped ZnO (AZO) is emerging as an alternative candidate for indium tin oxide (ITO) films due to its cheapness, remarkable electrical conductivity, the chemical stability lacking in ITO, abundant raw materials, and nontoxic features. It is easy to fabricate as well [1].…”

Section: Introductionmentioning

confidence: 99%

The Electrical and Optical Properties of Al-Doped ZnO Films Sputtered in an Ar:H₂Gas Radio Frequency Magnetron Sputtering System

Hwang¹,

Park²

2010

Transactions on Electrical and Electronic Materials

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Keywords:Al-doped ZnO films, Radio frequency magnetron sputtering, Ar:H 2 gas Al-doped ZnO (AZO) films were prepared by an Ar:H 2 gas radio frequency (RF) magnetron sputtering system with a AZO (2 wt·% Al 2 O 3 ) ceramic target at the low temperature of 100°C and annealed in hydrogen ambient at the temperature of 300°C. To investigate the influence of the H 2 flow ratio on the properties of the AZO films, the H 2 flow ratio was changed from 0.5% to 2%. As a result, the AZO films, deposited with a 1% H 2 addition, showed a resistivity of 11.7 × 10 -4 Ω·cm. When the AZO films were annealed at 300°C for 1 hour in a hydrogen atmosphere, the resistivity decreased from 11.7 × 10 -4 Ω·cm to 5.63 × 10 -4 Ω·cm. The lowest resistivity of 5.63 × 10 -4 Ω·cm was obtained by adding 1% hydrogen gas to the deposition and annealing process. The X-ray diffraction patterns of all the films showed a preferable growth orientation in the (002) plane. The spectrophotometer measurements showed that the transmittance of 85% was obtained by the film deposited with the H 2 flow ratio of 1% at 940 nm for GaAs/GaAlAs LEDs.

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“…Al-doped ZnO (AZO) exhibits a high electronic conductivity [21][22][23][24][25], which has been extensively investigated as a replacement of indium tin oxide (ITO) [26,27]. In this work, we prepared AZO-coated LNMO and their electrochemical properties were studied.…”

Section: Introductionmentioning

confidence: 99%

Significant improvement in performances of LiNi0.5Mn1.5O4 through surface modification with high ordered Al-doped ZnO electro-conductive layer

Sun

Xia

Liu³

et al. 2015

Applied Surface Science

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Effects of hydrogen flux on the properties of Al-doped ZnO films sputtered in Ar+H2 ambient at low temperature

Cited by 47 publications

References 22 publications

Physical Properties of ZnO Thin Films Codoped with Titanium and Hydrogen Prepared by RF Magnetron Sputtering with Different Substrate Temperatures

Physical Properties of ZnO Thin Films Codoped with Titanium and Hydrogen Prepared by RF Magnetron Sputtering with Different Substrate Temperatures

The Electrical and Optical Properties of Al-Doped ZnO Films Sputtered in an Ar:H₂Gas Radio Frequency Magnetron Sputtering System

Significant improvement in performances of LiNi0.5Mn1.5O4 through surface modification with high ordered Al-doped ZnO electro-conductive layer

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Effects of hydrogen flux on the properties of Al-doped ZnO films sputtered in Ar+H2 ambient at low temperature

Cited by 47 publications

References 22 publications

Physical Properties of ZnO Thin Films Codoped with Titanium and Hydrogen Prepared by RF Magnetron Sputtering with Different Substrate Temperatures

Physical Properties of ZnO Thin Films Codoped with Titanium and Hydrogen Prepared by RF Magnetron Sputtering with Different Substrate Temperatures

The Electrical and Optical Properties of Al-Doped ZnO Films Sputtered in an Ar:H2Gas Radio Frequency Magnetron Sputtering System

Significant improvement in performances of LiNi0.5Mn1.5O4 through surface modification with high ordered Al-doped ZnO electro-conductive layer

Contact Info

Product

Resources

About

The Electrical and Optical Properties of Al-Doped ZnO Films Sputtered in an Ar:H₂Gas Radio Frequency Magnetron Sputtering System