Effects of ion-beam mixing on the performance and reliability of devices with self-aligned silicide structure

Ku, Y. H.; Lee, S.K.; Kwong, D. L.; Lee, C.O.; Yeargain, J.R.

doi:10.1109/55.721

Cited by 15 publications

(1 citation statement)

References 7 publications

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“…To solve these problems we have developed a novel SALICIDE technology using rapid thermal annealing and ion-beam induced interface mixing techniques for selfaligned Ti silicide formation, and a doped silicide technique for shallow junction formation (41)(42)(43)(44)(45)(46)(47)(48)(49). The detail structure and process steps of this technology are shown in Fig.…”

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The Application of Ion Beam Mixing, Doped Silicide, and Rapid Thermal Processing to Self‐Aligned Silicide Technology

Lee

Kwong

1990

J. Electrochem. Soc.

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In this paper we have developed a SALICIDE process for CMOS applications using ion beam mixing for silicide formation and doped silicide in conjunction with RTA drive-in for shallow silicided junction formation, and have investigated the fundamental issues related to this process. Specifically, we have studied (i) the effects of ion beam mixing and RTA on the properties of Ti SALICIDE and the interaction between Ti and SiO2; (ii) the self-aligned TiN~OJTiSi2 formation and phase transformation; (iii) the mechanism of impurity redistribution and segregation, and junction formation during RTA drive-in; and (iv) the performances and reliability of fabricated SALICIDE devices. Results show that this process may have a great impact on future VLSI technology.

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confidence: 99%

The Application of Ion Beam Mixing, Doped Silicide, and Rapid Thermal Processing to Self‐Aligned Silicide Technology

Lee

Kwong

1990

J. Electrochem. Soc.

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Silicon Device Processing

Kwong

2013

Materials Science and Technology

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The sections in this article are Introduction Gettering Intrinsic Gettering Gettering by Hydrogen Annealing Device Isolation LOCOS ‐Based Isolation Advanced Isolation Techniques Silicon‐on‐Insulator Gate Dielectrics Preoxidation Cleaning Process Dependence of Gate Oxide Quality Chemically Modified Gate Oxides CVD and Stacked Oxides Shallow Junction Formation Ion Implantation Advanced Techniques for p + ‐ n Junction Formation Diffusion from Doped Deposited Layers Gas Immersion Laser Doping Gas Phase Diffusion Plasma Immersion Ion Implantation Metallization Gate Electrodes Contacts Interconnections Planarization for Multilevel Interconnections Cluster Tool Technology Advantages Rapid Thermal Processing In Situ Dry Cleaning Interface Engineering Gate Stack of Oxide and Oxynitride Deposition of DRAM Storage Dielectrics Selective Deposition Processes Ultra‐Shallow Junction Formation Integrated CMOS Processing Based on RTP Ge x Si 1− x / Si Heteroepitaxy by RT ‐ CVD Single‐Wafer Integrated Processing

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Silicon Device Processing

Kwong

1998

Silicon Devices

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Effects of ion-beam mixing on the performance and reliability of devices with self-aligned silicide structure

Cited by 15 publications

References 7 publications

The Application of Ion Beam Mixing, Doped Silicide, and Rapid Thermal Processing to Self‐Aligned Silicide Technology

The Application of Ion Beam Mixing, Doped Silicide, and Rapid Thermal Processing to Self‐Aligned Silicide Technology

Silicon Device Processing

Silicon Device Processing

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