Effects of Mn doping on dielectric and ferroelectric characteristics of lead-free (K, Na, Li)NbO3 thin films grown by chemical solution deposition

Large recoverable energy density with excellent thermal stability in Mn‐modified NaNbO3‐CaZrO3 lead‐free thin films

“…The root‐mean‐square (RMS) surface roughness obtained through Igor Pro software is also given in Figure F. Analogous to the previous reports, appropriate Mn addition, that is, 1.0 mol% in the present case, can improve the surface morphology and densification, resulting in crack‐free and uniform thin films. This behavior is closely related to two competing factors: the difference of element electronegativity and the presence of oxygen vacancies.…”

Ferroelectric and dielectric properties of Ca2+-doped and Ca2+–Ti4+co-doped K0.5Na0.5NbO3thin films

“…This is in accordance with the permittivity shown in Figure 7, where the increases in permittivity were 15.4% (Ca 2+ -doping) and 32.0% (CaTiO3-doping) at 150 °C. The values of the dielectric permittivity of the films as a function of temperature (Figure 7) are among the highest reported for KNN films from CSD 20,21,[26][27][28]30,31,33,34,36,42,46,47,51,53,54 . The dielectric loss of the three films (insets in Figure 6 and 7) showed only minor variations and were low for all three compositions.…”

“…Due to low cost and the ubiquity of Si in electronics, platinized silicon (SiPt, Pt/TiO2/SiO2/Si) is by far the most used substrate in ferroelectric oxide thin film CSD synthesis 17 . KNN thin film synthesis is no exception, and the majority of studies of KNN thin films are based on using SiPt substrates [19][20][21][22][23][24][28][29][30][31][32][33][34][35][36][40][41][42][43][46][47][48]52,53 , while a few other studies are reported using other substrates like SiO2/Si 38,58,59 , ZrO2/Si 44,45 , LaNiO3/Si 57 , Pt/MgO 39 , Pt/Al2O3 49,58 , metals 50,51,54 and SrTiO3 (STO) 18,[25][26][27]37,55,56 .…”