Effects of Multigate-Feeding Structure on the Gate Resistance and RF Characteristics of 0.1-$\mu{\hbox{m}}$ Metamorphic High Electron-Mobility Transistors

This letter aims at investigating the impact of the gate width on microwave FET performance, focusing on GaAs HEMT technology as a case study. To accomplish this complex task, the small-signal equivalent-circuit elements together with the major RF figures of merit are thoroughly analyzed for seven HEMTs based on an interdigitated layout. The gate-width impact on device performance is quantitatively and exhaustively estimated using a mathematical and systematical approach.

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Scalability of Multifinger HEMT Performance

Crupi

Raffo

Vadalà

et al. 2020

IEEE Microw. Wireless Compon. Lett.

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Modeling the Impact of Multi-Fingering Microwave MOSFETs on the Source and Drain Resistances

Zarate-Rincon

Murphy‐Arteaga

Torres‐Torres

et al. 2014

IEEE Trans. Microwave Theory Techn.

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Modern MOSFETs operated at high frequencies are designed and fabricated using a multi-fingered structure to enhance performance, especially to reduce gate resistance. However, even though the layout-dependent effect of other parasitics, such as that related to the source and drain resistances, is becoming more important, it has not been extensively investigated at high frequencies. In this paper, source and drain resistances are experimentally determined and analyzed for several microwave MOSFETs to characterize their corresponding dependence on the layout. This allows for the quantification and modeling of the impact of the device's geometry on its parasitic extrinsic parameters. Physically based closed-form equations are proposed here to accurately represent -parameters of MOSFETs operating at microwave frequencies with layouts considering different numbers of gate fingers, and grouping devices in cells with multiple source and drain junctions. The proposed models are compatible with SPICE-like circuit simulators, and an excellent model-experiment correlation is obtained when using the proposed scalable equations to represent different geometry MOSFETs up to 60 GHz.

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Lumped-Element Equivalent-Circuit Modeling of Millimeter-Wave HEMT Parasitics Through Full-Wave Electromagnetic Analysis

Karisan

Caglayan

Trichopoulos

et al. 2016

IEEE Trans. Microwave Theory Techn.

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Effects of Multigate-Feeding Structure on the Gate Resistance and RF Characteristics of 0.1-$\mu{\hbox{m}}$ Metamorphic High Electron-Mobility Transistors

Cited by 3 publications

References 24 publications

Scalability of Multifinger HEMT Performance

Scalability of Multifinger HEMT Performance

Modeling the Impact of Multi-Fingering Microwave MOSFETs on the Source and Drain Resistances

Lumped-Element Equivalent-Circuit Modeling of Millimeter-Wave HEMT Parasitics Through Full-Wave Electromagnetic Analysis

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