Lumped-Element Equivalent-Circuit Modeling of Millimeter-Wave HEMT Parasitics Through Full-Wave Electromagnetic Analysis

An accurate parasitic parameters extraction method based on FW‐EM for AlGaN/GaN HEMT up to 110 GHz

“…The parasitic network contains 2‐stage inductance and capacitance branches in Figure , which accounts distribution effects of electrodes, represented by N = 1 and N = 2. When there is only N = 1 branch, the model is similar with conventional simplified model . The values of the parasitic capacitance and inductance can be obtained uniquely and directly according to the proposed procedure, which is shown in Figure .…”

“…When there is only N = 1 branch, the model is similar with conventional simplified model. [11][12][13][14][15][16][17] The values of the parasitic capacitance and inductance can be obtained uniquely and directly according to the proposed procedure, which is shown in Figure 3. Figure 4A shows the gate and drain electrodes pad layout of 2 × 80 μm device, and its equivalent circuit is also presented in Figure 4B The S-parameters of this structure is simulated by using full-wave electromagnetic using Ansys HFSS.…”

“…While the topology in previous studies cannot apply to W band model, since the distribution effect is obvious in W band. Full‐wave electromagnetic (FW‐EM) technology also has been used to extract the parasitic parameters and shows good results; nevertheless, simplified parasitic model is still adopted, and extra calculation or optimization is needed for all these reports. FW‐EM approach is also suitable for GaN noise modeling.…”

“…Full-wave electromagnetic (FW-EM) technology also has been used to extract the parasitic parameters and shows good results [11][12][13][14][15][16][17] ; nevertheless, simplified parasitic model is still adopted, and extra calculation or optimization is needed for all these reports. FW-EM approach is also suitable for GaN noise modeling.…”

A review on the artificial neural network applications for small‐signal modeling of microwave FETs

“…Therefore, ANNs are widely used also for modeling and predicting the scattering (S-) parameters of microwave field-effect transistors (FETs). 7,8,11,13,18,[40][41][42][43][44][45][46][47][48][49] The main advantage of an ANN-based FET model is that, because of the "black-box" nature of ANN models, the S-parameters can be straightforwardly and accurately reproduced without requiring the extraction of an equivalent-circuit model [50][51][52][53][54][55][56][57][58][59][60][61][62][63][64][65][66][67][68] or a detailed knowledge of the FET physics. [69][70][71][72][73] As a matter of fact, by exploiting ANNs, it is possible mathematically describe the observable inputoutput relationships.…”