Effects of multiple heat treatment cycles on structure, optical and electrical properties of indium-tin-oxide thin films

Guai, Guan Hong; Song, Qunliang; Lu, Zhisong; Li, Chang Ming

doi:10.1016/j.surfcoat.2010.10.062

Cited by 17 publications

(5 citation statements)

References 45 publications

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“…These results are in agreement with the earlier reported works. 14,15 Measurement of XRD results with respect to 150°C (with different annealing time) and 300°C (with different annealing time), are almost comparable with standard pattern for pure indium oxide, In 2 O 3 . 16 It is evident from the result that as we increase the annealing temperature, multiple peaks start appearing.…”

Section: Resultssupporting

confidence: 52%

Enhancement of surface properties using new annealing technique for ITO thin films

Hegde

Qasim

Al-Dabbagh

et al. 2015

Surface Engineering

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Influence of new technique of 'oil thermal annealing (OTA)' on the nanostructured ITO coated films which improve adhesion strength, electrical conductivity and optical properties (transmittance) is revealed. The X-ray diffraction measurement (XRD) used to investigate the properties of nano structure films when the annealing temperature increases from 150 to 300uC. Surface characteristics of ITO films were investigated by different methods revealed the improvement in their surface properties due to oil thermal annealing treatment in comparison with as deposited films. Annealing is used to reduce inherent defects that may be introduced during the prepared thin film and cooling processes. The ITO film significantly presents a higher electrical conductivity of 38?6610 3 V 21 cm 21 , as compared with as deposited films (y0?909610 3 V 21 cm 21 ). The proposed technique is useful in photonic device applications.

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Section: Resultssupporting

confidence: 52%

Enhancement of surface properties using new annealing technique for ITO thin films

Hegde

Qasim

Al-Dabbagh

et al. 2015

Surface Engineering

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“…The improved crystal growth and reduced grain boundary also contributed to the release of the electrons trapped at the grain boundary, which increased the thin-film carrier concentration. As the substrate temperature reached 500 °C, the carrier concentration increased to the maximal value of 5.1 × 10 21 cm −3 [ 22 , 23 ].…”

Section: Resultsmentioning

confidence: 99%

Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

Liu

Cheng

et al. 2015

Materials

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In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10−4 Ω/cm), carrier concentration (4.1 × 1021 cm−3), carrier mobility (10 cm2/Vs), and mean visible-light transmittance (90%) at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm−3) with a high figure of merit (81.1 × 10−3 Ω−1) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

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“…Indium tin oxide (ITO) thin films are being the most used material, the interest of which has been trusted by fundamental advantages over the competing materials. ITO thin films have been manufactured by using a variety of methods including direct current and radiofrequency sputtering [5,6], reactive evaporation [7], pulsed laser ablation [8], electron beam evaporation [9], spray pyrolysis [10], and sol-gel techniques [11].…”

Section: Introductionmentioning

confidence: 99%

Study of Structure and Electro-Optical Characteristics of Indium Tin Oxide Thin Films

Khusayfan

El-Nahass

2013

Advances in Condensed Matter Physics

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ITO thin films were prepared by electron beam evaporation of ceramic ITO target. The films were subsequently annealed in air atmosphere at the temperatures 300°C and 600°C in order to improve their optical and electrical properties. The crystal structure and morphology of the films are investigated by X-ray diffraction and scanning electron microscope techniques, respectively. The films exhibited cubic structure with predominant orientation of growth along (222) direction, and the crystallite size increases by rising annealing temperature. Transparency of the films, over the visible light region, is increased by annealing temperature. The resulting increase in the carrier concentration and in the carrier mobility decreases the resistivity of the films due to annealing. The absorption coefficient of the films is calculated and analyzed. The direct allowed optical band gap for as-deposited films is determined as 3.81 eV; this value is increased to 3.88 and 4.0 eV as a result of annealing at 300°C and 600°C, respectively. The electrical sheet resistance is significantly decreased by increasing annealing temperature, whereas figure of merit is increased.

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Effects of multiple heat treatment cycles on structure, optical and electrical properties of indium-tin-oxide thin films

Cited by 17 publications

References 45 publications

Enhancement of surface properties using new annealing technique for ITO thin films

Enhancement of surface properties using new annealing technique for ITO thin films

Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

Study of Structure and Electro-Optical Characteristics of Indium Tin Oxide Thin Films

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