Effects of natural and forced convection in vapor phase growth systems

Momentum, heat and mass transfer processes were studied in a vertical cylinder reactor for the epitaxial growth of Si from SiC1 4 in H 2 by chemical vapor deposition. An analytical solution to the problem of heat and mass transfer in a tapered annulus is presented based on constant transport properties and fully-developed laminar tlow. The mean gas-phase temperature and deposition rate distribution of silicon are calculated within the reactor using the developing temperature model. Results of experimental studies of silicon deposition from SiC1 4 in H 2 at 1200°C in a vertical cylinder reactor are compared with the analytical results, and with other models of diffusion-controlled chemical vapor deposition. This study provides an analytical basis for epitaxial deposition rate distributions in vertical cylinder reactors, and for reactor design to improve the yield and uniformity of epitaxial growth • * This report was done with support from the United States Energy Research and Development Administration.• Any conclusions or opinions expressed in this report represent solely those of the authors and not necessarily those of The Regents of the University of California, the Lawrence Berkeley Laboratory or the United States Energy Research and Development Administration.-1-I.

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“…Flow instability in the presence of a large thermal gradient can occur even in laminar flow, however. Curtis and Dismukes(19) and…”

mentioning

confidence: 99%

Analysis of Transport Processes in Vertical Cylinder Epitaxy Reactors

Manke

Donaghey

1977

J. Electrochem. Soc.

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“…When the growth container is used in a horizontal position the temperature difference along the horizontal direction can also lead to a natural convection. If no temperature gradient is imposed in the vertical direction, a steady flow should even begin for any horizontal temperature difference as it is discussed by Curtis et al (1972).…”

Section: LI Mass Transfermentioning

confidence: 97%

Growth and Properties

1980

Crystals

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“…7,207,208 A general treatment of this problem was given by Scha ¨fer et al, 107 Reed et al, 209 and Curtis and Dismukes. 210 The growth of crystals and epitaxial layers is influenced by convection, too. Investigations of the effects on the morphology of crystals and layers grown by chemical transport reactions under the influence of convection are reported in the transport systems GaAs/GaI 3 , 211 GeSe/GeI 4 , 212,213 Hg 1-x Cd x Te/ HgI 2 , [214][215][216][217][218] GeSe/I 2 , 219 GeSe 2 /I 2 , 219 GeTe/I 2 , 219 GeTe/ GeI 4 , 213 ZnTe/I 2 , 220 MnSe/CdSe/I 2 , 221 GeSe 0.99 Te 0.01 / GeI 4 , 122 GeSe 0.98 Te 0.02 /GeCl 4 , 122 and GeS/GeCl 4 /Ar.…”

Section: E Convectionmentioning

confidence: 99%

Developments in Measuring and Calculating Chemical Vapor Transport Phenomena Demonstrated on Cr, Mo, W, and Their Compounds

Lenz

Gruehn

1997

Chem. Rev.

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referred to but will not be discussed. The involvement of a hitherto unknown gaseous species may be indicated by the experimental data that do not agree with model calculations at all.We will report new possibilities of measuring the mass flux inside a closed ampule. The correlation of thermochemical calculations with experimental data is particularly proven in the systems containing Cr, Mo, W, or their compounds.

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Effects of natural and forced convection in vapor phase growth systems

Cited by 37 publications

References 45 publications

Analysis of Transport Processes in Vertical Cylinder Epitaxy Reactors

Analysis of Transport Processes in Vertical Cylinder Epitaxy Reactors

Growth and Properties

Developments in Measuring and Calculating Chemical Vapor Transport Phenomena Demonstrated on Cr, Mo, W, and Their Compounds

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