Effects of nitridation pressure on the characteristics of gate dielectrics annealed in N<sub>2</sub>O ambient

Joo, Moon Sig; Yeo, In‐Seok; Lee, Chanho; Cho, Heung-Jae; Jang, Se-Aug; Lee, Sahng‐Kyoo

doi:10.1109/55.784447

Cited by 3 publications

(1 citation statement)

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“…Regarding the impact of nitridation on TDDB/HBD, to the best of our knowledge, there are a very limited number of publications addressing this subject. Among them, are the papers by Joo et al [ 25 ] and Mazumder et al [ 26 ], which analyzed how nitridation in NO

ambient impacts TDDB and concluded that low-pressure nitridation results in the improvement of TDDB robustness, while nitridation at an increased pressure leads to poorer TDDB characteristics. A TDDB lifetime improvement due to annealing in the NO ambience was reported by Chen et al [ 27 ], while Lee et al [ 28 ] demonstrated that ex situ N annealing has a very weak impact on TDDB.…”

Section: Introductionmentioning

confidence: 99%

Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs

et al. 2023

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We study how nitridation, applied to SiON gate layers, impacts the reliability of planar metal-oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive bias temperature instability (N/PBTI) as well as hard breakdown (HBD) characteristics of these devices. Experimental data demonstrate that p-channel transistors with SiON layers characterized by a higher nitrogen concentration have poorer NBTI reliability compared to their counterparts with a lower nitrogen content, while PBTI in n-channel devices is negligibly weak in all samples independently of the nitrogen concentration. The Weibull distribution of HBD fields extracted from experimental data in devices with a higher N density are shifted towards lower values with respect to that measured in MOSFETs, and SiON films have a lower nitrogen concentration. Based on these findings, we conclude that a higher nitrogen concentration results in the aggravation of BTI robustness and HBD characteristics.

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Section: Introductionmentioning

confidence: 99%

Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs

et al. 2023

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Advances in high-k dielectric gate materials for future ULSI devices

Sharma

Kumar

Anthony

2001

JOM

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Overview Microelectronic ProcessingThis article discusses recent developments in high dielectric constant gate insulator materials for future ultra-large-scale integration devices below 100 nm. Since conventional gate oxide poses problems as device features are scaled down, it becomes necessary to develop new gate dielectric materials with properties similar to SiO 2 and compatible with current complementary metal-oxide semiconductor technology. As the thickness of silicon dioxide approaches less than 1.5 nm, the leakage current becomes higher than 1 A/cm 2 and tunnel current increases significantly. Therefore, materials are needed to provide excellent electrical characteristics such as dielectric constant higher than 30, interface-state-density less than 1 ¥ 10 11 / cm 2 -eV, tunneling current less than 10 mA/ cm 2 , and negligible hysteresis. Many high dielectric constant materials have been reported that could potentially replace SiO 2 . These include SiO x N , and silicates of hafnium and zirconium. These materials exhibit the desired high dielectric constants for applications as gate dielectrics in sub-100 nm silicon technology. However, detailed studies need to be performed to evaluate the compatibility of these materials with the rest of the silicon integrated-circuit manufacturing processes.

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Nitrogen Effects on the Integrity of Silicon Dioxide Grown on Polycrystalline Silicon

Lai

Kao

Lee

et al. 2007

J. Electrochem. Soc.

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In this paper, we describe a simple technique to achieve a thin nitrided polyoxide film, only requiring an extra nitrogen implantation to be compatible with the floating gate nonvolatile memory process. The integrity of polyoxides is improved by using the through-silicon-gate nitrogen implantation. Nitridation can be achieved by implanting nitrogen into polysilicon gate followed by a high temperature annealing to drive the nitrogen atoms across the polysilicon, through the polyoxide, and to incorporate nitrogen at the polyoxide/polysilicon interface. The nitrogen-rich layer formed during the driven-in process not only strengthens the polyoxide structure but also improves the polyoxide quality. Improvements of electrical characteristics such as a low leakage current, a low electron trapping, and a high breakdown field for both positive and negative biases have been observed.

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Effects of nitridation pressure on the characteristics of gate dielectrics annealed in N₂O ambient

Cited by 3 publications

References 10 publications

Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs

Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs

Advances in high-k dielectric gate materials for future ULSI devices

Nitrogen Effects on the Integrity of Silicon Dioxide Grown on Polycrystalline Silicon

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Effects of nitridation pressure on the characteristics of gate dielectrics annealed in N2O ambient

Cited by 3 publications

References 10 publications

Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs

Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs

Advances in high-k dielectric gate materials for future ULSI devices

Nitrogen Effects on the Integrity of Silicon Dioxide Grown on Polycrystalline Silicon

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Effects of nitridation pressure on the characteristics of gate dielectrics annealed in N₂O ambient