Effects of Nitrogen Content on the Phase and Resistivity of TaN Thin Films Deposited by Electron Beam Evaporation

Arshi, Nishat; Lu, Junqing; Lee, Chan Gyu; Koo, Bon‐Heun

doi:10.1007/s11837-014-1028-6

Cited by 13 publications

(20 citation statements)

References 33 publications

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“…This indicates the presence of some other chemical states or defects at the surface, which resulted in the lower binding energy of Ta 4f peak. A similar broad peak with a decreased intensity of the Ta 4f peak at a higher N 2 fraction was also reported by Arshi et al [27]. As shown in Figure 6b, the N 1s peak is~397 eV and this corresponds to binding energy of nitrogen in a metal nitride state, although the Ta 4p 3/2 peak at 403.5 eV is almost constant.…”

Section: Xps Studiessupporting

confidence: 86%

“…As the N2 content is further decreased to 2.5%, hex Ta2N is still the dominant phase textured along the (101) orientation. The (101) texture is more pronounced when compared to the film that is deposited with almost same content of N2 (3%), but at EB = −100 V. A similar change in crystal structure from fcc TaN to hex Ta2N with decreasing N2 has been reported in the literatures [4,14,26,27]. Figure 4 shows the variation in the deposition rate (nm/h) of the films that were deposited at EB of −100 V and −200 V. The thickness of the films deposited at EB = −100 V was around 500 ± 30 nm except for the ones deposited with 7% and 5% N2.…”

Section: Figuresupporting

confidence: 80%

“…Previous studies on magnetron sputtered Ta-N films have reported on the change in crystal structure from fcc TaN to hex TaN, and finally to hex Ta 2 N with varying N 2 /(N 2 + Ar) ratio [4,14,26,27]. Most of studies have reported on the hardness of various Ta-N phases, but their microstructure in relation to mechanical properties is scarcely examined.…”

Section: Introductionmentioning

confidence: 99%

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Microstructure and Mechanical Properties of TaN Thin Films Prepared by Reactive Magnetron Sputtering

Zaman

Meletis

2017

Coatings

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Abstract:Reactive magnetron sputtering was used to deposit tantalum nitride (Ta-N) thin films on Si substrate. The effect of varying the N 2 percentage in the N 2 /Ar gas mixture on the Ta-N film characteristics was investigated. Mechanical and tribological properties were studied using nanoindentation and pin-on-disc wear testing. Decreasing the N 2 content in the gas mixture was found to change the film structure from face centered cubic (fcc) TaN (from 25% to 10% N 2 ) to highly textured fcc TaN (at 7% N 2 ) to a mixture of fcc TaN 1.13 and hexagonal Ta 2 N (at 5% N 2 ), and finally to hexagonal Ta 2 N (at 3% N 2 ). A high hardness of about 33 GPa was shown by the films containing the hexagonal Ta 2 N phase (5% and 3% N 2 ). Decreasing the N 2 content below 7% N 2 was also found to result in microstructural refinement with grain size 5-15 nm. Besides the highest hardness, the film deposited with 3% N 2 content exhibited the highest hardness/modulus ratio (0.13), and elastic recovery (68%), and very low wear rate (3.1 × 10 −6 mm 3 ·N −1 ·m −1 ).

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Section: Xps Studiessupporting

confidence: 86%

Section: Figuresupporting

confidence: 80%

Section: Introductionmentioning

confidence: 99%

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Microstructure and Mechanical Properties of TaN Thin Films Prepared by Reactive Magnetron Sputtering

Zaman

Meletis

2017

Coatings

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“…The electrical resistivity of pure Ta films sputtered for 10, 20 and 30 min are nearly same (193.5, 197.4, and 193.9 µΩ-cm, respectively (Table 1)). It is interesting to notice that the measured resistivity for pure Ta films are similar to the values reported for tetragonal crystalline Ta (β-Ta) films (165 µΩ-cm, Schauer et al [37]; 210 µΩ-cm, Cuong et al [38]) and 242 µΩ-cm, Arshi et al [39]). Therefore, our pure Ta films are most likely β-Ta.…”

Section: Deposition Rate and Resistivitysupporting

confidence: 76%

Influence of N<sub>2</sub> Flows on Sputtered Ta(N) films: Electrical, Structural, Chemical and Optical Properties

Hu¹,

Rasadujjaman²,

Wang³

et al. 2021

Preprint

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By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with a different N2 flow rate of 0, 12, 17, 25, 38, 58 sccm. The effects of N2 flow rate on the electrical properties, crystal structure, elemental composition and optical properties of Ta(N) were studied. These properties were characterized by the four-probe method, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). Results show that the deposition rate decreases with an increase of the N2 flows. On the other hand, the resistivity increases, the crystal size decreases, and the crystal structure transitions from β-Ta to TaN(111), and finally becomes the N-rich phase Ta3N5 (130,040). Studying the optical properties, it is found that there are differences in the refractive index (n) and extinction coefficient (k) of Ta(N) with different thicknesses and different N2 flow rates, and dependent on the crystal size and crystal phase structure.

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“…As far as the Ta 4f peak is concerned, the doublet shows the binding energy of Ta 4f 7/2 to be around 23.5 eV and that of Ta 4f 5/2 to be close to 25.5 eV. These binding energies correspond to a chemical state of Ta in Ta-N (4f 7/2 = 23 eV and 4f 5/2 = 25 eV) [24,25]. Thus, the XPS results confirm formation of nitrides for both Si and Ta.…”

Section: Effect Of N2 Content On Composition and Chemical Statesmentioning

confidence: 93%

Microstructure and Mechanical Property Investigation of TaSiN Thin Films Deposited by Reactive Magnetron Sputtering

2019

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Tantalum silicon nitride (Ta–Si–N) films were synthesized on Si substrate via magnetron sputtering. The structure and properties of the Ta–Si–N films were investigated as a function of the N2 content in the N2/Ar gas mixture. Increasing the N2 percentage in the gas mixture from 7% to 20% changed the film structure from textured hexagonal (hex) Ta2N to nontextured hex Ta2N to a mixture of face-centered cubic (fcc) TaN and hex Ta2N, and finally to fcc TaN. X-ray photoelectron spectroscopy showed Ta–N and Si–N bonds in the films. The film microstructure was found to change from columnar morphology with visible amorphous boundaries (at 13% N2) to columnar morphology with absence of amorphous boundaries (at 15% N2). Increasing N2 content increased hardness in the films with those deposited with 13–15% N2 displaying the highest hardness of ~40 ± 2 GPa. In addition, the 13% N2 films showed a ratio of H/E* > 0.11, elastic recovery of ~60%, low coefficient of friction of 0.6, reduced wear rate (7.09 × 10−6 mm3/N·m), and remained thermally stable up to 800 °C. The results suggest that the Ta–Si–N films have high potential as hard tribological nanocomposite coatings.

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Effects of Nitrogen Content on the Phase and Resistivity of TaN Thin Films Deposited by Electron Beam Evaporation

Cited by 13 publications

References 33 publications

Microstructure and Mechanical Properties of TaN Thin Films Prepared by Reactive Magnetron Sputtering

Microstructure and Mechanical Properties of TaN Thin Films Prepared by Reactive Magnetron Sputtering

Influence of N<sub>2</sub> Flows on Sputtered Ta(N) films: Electrical, Structural, Chemical and Optical Properties

Microstructure and Mechanical Property Investigation of TaSiN Thin Films Deposited by Reactive Magnetron Sputtering

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