Effects of operational and geometrical conditions upon photosensitivity of amorphous InZnO thin film transistors

Park, Sungho; Park, Sekyoung; Ahn, Sungyoon; Song, Ihun; Chae, Won Seok; Han, Manso; Lee, Je Seung; Jeon, Sanghun

doi:10.1116/1.4818279

Cited by 19 publications

(13 citation statements)

References 18 publications

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“…Recently, InO x -based amorphous oxide semiconductors such as In 2 O 3 , 7,8 InZnO, 9,10 Sn-InZnO, 11 Hf-InZnO, 12,13 Si-InZnO, 3,14 Zr-InZnO, 15,16 InGaZnO (IGZO), 17 InWO, 18 and InSiO 19,20 have been investigated in low-temperature processes to improve device performance. Because Zn-containing oxide semiconductors are sensitive to moisture in the atmosphere, 21 a ZnO-based TFT that is fabricated at a low temperature is difficult to use in stable operation.…”

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confidence: 99%

Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

et al. 2014

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confidence: 99%

Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

et al. 2014

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“…Thin film transistors based on amorphous oxide films (OxTFTs) have attracted tremendous interest as TFT backplanes in active-matrix organic light emitting diodes (OLEDs) and liquid crystal displays owing to their high mobilities. [1][2][3][4][5][6][7] Intensive developments on oxide compounds including InO x -based, [8][9][10][11][12][13] ZnO x -based, 14 SnO x -based 15 and mixed channel materials such as InZnO x -based OxTFTs [16][17][18][19][20][21][22][23][24][25] have been widely studied in OxTFTs in recent decades because of their excellent electrical stabilities and high mobilities. Among them, InGaZnO (IGZO) 1,2,26 and InSnZnO (ITZO) 18,19 are currently being developed for use as commercial TFT backplanes because of their superior properties and high electron mobilities.…”

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confidence: 99%

Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process

et al. 2015

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The stable operation of transistors under a positive bias stress (PBS) is achieved using Hf incorporated into InOx-based thin films processed at relatively low temperatures (150 to 250 °C). The mobilities of the Hf-InOx thin-film transistors (TFTs) are higher than 8 cm2/Vs. The TFTs not only have negligible degradation in the mobility and a small shift in the threshold voltage under PBS for 60 h, but they are also thermally stable at 85 °C in air, without the need for a passivation layer. The Hf-InOx TFT can be stable even annealed at 150 °C for positive bias temperature stability (PBTS). A higher stability is achieved by annealing the TFTs at 250 °C, originating from a reduction in the trap density at the Hf-InOx/gate insulator interface. The knowledge obtained here will aid in the realization of stable TFTs processed at low temperatures.

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“…Under UV illumination, I DS increased significantly, which can be attributed to the generation of non-equilibrium carriers [32]. Moreover, the shorter the light wavelength, the more obvious the increase of I DS .…”

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confidence: 99%

Amorphous InGaMgO Ultraviolet Photo-TFT with Ultrahigh Photosensitivity and Extremely Large Responsivity

Zhang

Qian

et al. 2017

Materials

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Recently, amorphous InGaZnO ultraviolet photo thin-film transistors have exhibited great potential for application in future display technologies. Nevertheless, the transmittance of amorphous InGaZnO (~80%) is still not high enough, resulting in the relatively large sacrifice of aperture ratio for each sensor pixel. In this work, the ultraviolet photo thin-film transistor based on amorphous InGaMgO, which processes a larger bandgap and higher transmission compared to amorphous InGaZnO, was proposed and investigated. Furthermore, the effects of post-deposition annealing in oxygen on both the material and ultraviolet detection characteristics of amorphous InGaMgO were also comprehensively studied. It was found that oxygen post-deposition annealing can effectively reduce oxygen vacancies, leading to an optimized device performance, including lower dark current, higher sensitivity, and larger responsivity. We attributed it to the combined effect of the reduction in donor states and recombination centers, both of which are related to oxygen vacancies. As a result, the 240-min annealed device exhibited the lowest dark current of 1.7 × 10−10 A, the highest photosensitivity of 3.9 × 106, and the largest responsivity of 1.5 × 104 A/W. Therefore, our findings have revealed that amorphous InGaMgO photo thin-film transistors are a very promising alternative for UV detection, especially for application in touch-free interactive displays.

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Effects of operational and geometrical conditions upon photosensitivity of amorphous InZnO thin film transistors

Cited by 19 publications

References 18 publications

Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

Reduction of the interfacial trap density of indium-oxide thin film transistors by incorporation of hafnium and annealing process

Amorphous InGaMgO Ultraviolet Photo-TFT with Ultrahigh Photosensitivity and Extremely Large Responsivity

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