Effects of oxygen ion beam plasma conditions on the properties of Indium tin oxide thin films

Bae, Jong Woon; Kim, H.J.; Kim, J.S.; Lee, N.E.; Yeom, Geun Young

doi:10.1016/s0042-207x(99)00169-4

Cited by 26 publications

(17 citation statements)

References 15 publications

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“…From these results, we can conclude that, in amorphous ITO films, electrical resistivity is more affected by the carrier density controlled by oxygen vacancies than by carrier mobility. Our results are in good agreement with those of Bae et al [27].…”

Section: With Increasing Temperature Up To 350supporting

confidence: 94%

Characterization of ITO/CdO/glass thin films evaporated by electron beam technique

Hussein

Ali

2008

Science and Technology of Advanced Materials

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A thin buffer layer of cadmium oxide (CdO) was used to enhance the optical and electrical properties of indium tin oxide (ITO) films prepared by an electron-beam evaporation technique. The effects of the thickness and heat treatment of the CdO layer on the structural, optical and electrical properties of ITO films were carried out. It was found that the CdO layer with a thickness of 25 nm results in an optimum transmittance of 70% in the visible region and an optimum resistivity of 5.1 × 10 −3 cm at room temperature. The effect of heat treatment on the CdO buffer layer with a thickness of 25 nm was considered to improve the optoelectronic properties of the formed ITO films. With increasing annealing temperature, the crystallinity of ITO films seemed to improve, enhancing some physical properties, such as film transmittance and conductivity. ITO films deposited onto a CdO buffer layer heated at 450• C showed a maximum transmittance of 91% in the visible and near-infrared regions of the spectrum associated with the highest optical energy gap of 3.61 eV and electrical resistivity of 4.45 × 10 −4 cm at room temperature. Other optical parameters, such as refractive index, extinction coefficient, dielectric constant, dispersion energy, single effective oscillator energy, packing density and free carrier concentration, were also studied.

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Section: With Increasing Temperature Up To 350supporting

confidence: 94%

Characterization of ITO/CdO/glass thin films evaporated by electron beam technique

Hussein

Ali

2008

Science and Technology of Advanced Materials

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“…4,5 In most applications the production of thin ITO films is necessary. For this purpose common methods of layer deposition such as evaporation of In 2 O 3 and SnO 2 powders [6][7][8][9][10][11][12] and ͑magnetron͒ dc-and rf-sputtering 2,[13][14][15][16][17][18][19] spray pyrolysis 1,5,20 are widely used. 21 Additionally some other methods of thin-film production have evolved.…”

Section: Introductionmentioning

confidence: 99%

Formation of metallic indium-tin phase from indium-tin-oxide nanoparticles under reducing conditions and its influence on the electrical properties

Günther¹,

Schierning²,

Theissmann³

et al. 2008

Journal of Applied Physics

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The correlation between defect structure, metal segregation, and electrical resistivity of indium-tin-oxide nanopowder upon treatment in reducing atmosphere was investigated. Morphology and defect structure have been investigated by in situ synchrotron x-ray diffraction and transmission electron microscopy, while traces of metallic indium have been detected by susceptibility measurements utilizing the superconducting properties of indium. With increasing treatment temperature under reforming gas the film resistivity decreases down to = 1.6 ϫ 10 −2 ⍀ cm at 330°C annealing temperature. For even higher treatment temperatures, the resistivity increases further. This is accompanied by extractions of metallic indium. Under forming gas, grain growth could be observed at 350°C, while in air grain growth starts at 650°C. Furthermore forming gas causes a lattice expansion of ITO which persists in oxygen, at least for several hours. The results are discussed with respect to results published in the literature.

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“…O 2 LPP and Ar/O 2 APP showed a sharp increase in resistance with increasing plasma treatment time. However, the Ar APP showed a constant of resistance after a plasma treatment time of 2 s. In an amorphous ITO thin film, the electrical properties of the deposited ITO film were more affected by the carrier density controlled by oxygen vacancy rather than the electron mobility [31]. The change in electrical resistance was related to the concentrations of oxygen vacancies and tin-dopants [31].…”

Section: Surface Analysismentioning

confidence: 97%

“…However, the Ar APP showed a constant of resistance after a plasma treatment time of 2 s. In an amorphous ITO thin film, the electrical properties of the deposited ITO film were more affected by the carrier density controlled by oxygen vacancy rather than the electron mobility [31]. The change in electrical resistance was related to the concentrations of oxygen vacancies and tin-dopants [31]. Therefore, after the O 2 LPP and Ar/O 2 APP treatment, an increase of resistance indicates that the surface becomes closer to stoichiometric In 2 O 3 , which results in a decrease in the free carriers due to a decrease in the concentration of O vacancies [30].…”

Section: Surface Analysismentioning

confidence: 98%

“…10 shows the resistance of the ITO film treated with the plasma. The surface resistance, which is determined by the free carrier density in the film, is closely related to the chemi- cal state of Sn and O in the amorphous ITO thin film [30,31]. O 2 LPP and Ar/O 2 APP showed a sharp increase in resistance with increasing plasma treatment time.…”

Section: Surface Analysismentioning

confidence: 99%

See 1 more Smart Citation

Surface treatment and characterization of ITO thin films using atmospheric pressure plasma for organic light emitting diodes

Jung

Choi

2007

Journal of Colloid and Interface Science

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Effects of oxygen ion beam plasma conditions on the properties of Indium tin oxide thin films

Cited by 26 publications

References 15 publications

Characterization of ITO/CdO/glass thin films evaporated by electron beam technique

Characterization of ITO/CdO/glass thin films evaporated by electron beam technique

Formation of metallic indium-tin phase from indium-tin-oxide nanoparticles under reducing conditions and its influence on the electrical properties

Surface treatment and characterization of ITO thin films using atmospheric pressure plasma for organic light emitting diodes

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